The Organizational Voice

Waele, Aurélie De; Claeys, An‐Sofie; Cauberghe, Veroline

doi:10.1177/0093650217692911

Cited by 24 publications

(10 citation statements)

References 61 publications

(166 reference statements)

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“…Thus, details of the distilling process do not matter in this approximation [13]. Q s is affected by the installation of a 1K-cooler in the dilution loop.…”

Section: B Refrigeration Power Of the Stillmentioning

confidence: 99%

Dry dilution refrigerator with 4He-1K-loop

Uhlig¹

2015

Cryogenics

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In this article we summarize experimental work on cryogen-free 3 He/ 4 He dilution refrigerators which, in addition to the dilution refrigeration circuit, are equipped with a 4 He-1K-stage. This type of DR becomes worth considering when high cooling capacities are needed at T ~ 1 K to cool cold amplifiers and heat sink cables. In our application, the motivation for the construction of this type of cryostat was to do experiments on superconducting quantum circuits for quantum information technology and quantum simulations. In other work, DRs with 1K-stage were proposed for astro-physical cryostats. For neutron scattering research, a top-loading cryogen-free DR with 1K-stage was built which was equipped with a standard commercial dilution refrigeration insert.Cooling powers of up to 100 mW have been reached with our 1K-stage, but higher refrigeration powers were achieved with more powerful pulse tube cryocoolers and higher 4 He circulation rates in the 1K-loop. Several different versions of a 1K-loop have been tested in combination with a dilution refrigeration circuit.The lowest temperature of our DR was 4.3 mK.

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“…Thus, details of the distilling process do not matter in this approximation [13]. Q s is affected by the installation of a 1K-cooler in the dilution loop.…”

Section: B Refrigeration Power Of the Stillmentioning

confidence: 99%

Dry dilution refrigerator with 4He-1K-loop

Uhlig¹

2015

Cryogenics

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“…For example, reduced speech rate is known to negatively influence judgments of the speaker by others. Slower speakers are considered less truthful, less fluent, and less persuasive 11,12 . Disturbances in spontaneous speech can therefore have a negative impact on a broad range of life experiences 13 .…”

Section: Introductionmentioning

confidence: 99%

Language disturbances in schizophrenia: the relation with antipsychotic medication

et al. 2020

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Language disturbances are key aberrations in schizophrenia. Little is known about the influence of antipsychotic medication on these symptoms. Using computational language methods, this study evaluated the impact of high versus low dopamine D2 receptor (D2R) occupancy antipsychotics on language disturbances in 41 patients with schizophrenia, relative to 40 healthy controls. Patients with high versus low D2R occupancy antipsychotics differed by total number of words and type-token ratio, suggesting medication effects. Both patient groups differed from the healthy controls on percentage of time speaking and clauses per utterance, suggesting illness effects. Overall, more severe negative language disturbances (i.e. slower articulation rate, increased pausing, and shorter utterances) were seen in the patients that used high D2R occupancy antipsychotics, while less prominent disturbances were seen in low D2R occupancy patients. Language analyses successfully predicted drug type (sensitivity = 80.0%, specificity = 76.5%). Several language disturbances were more related to drug type and dose, than to other psychotic symptoms, suggesting that language disturbances may be aggravated by high D2R antipsychotics. This negative impact of high D2R occupancy drugs may have clinical implications, as impaired language production predicts functional outcome and degrades the quality of life.

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“…Calculated work functions φ, compared with those calculated by De Waele et al (φ ref )[40] and experimental values (φ exp ).…”

mentioning

confidence: 99%

Quantitative modeling of secondary electron emission from slow-ion bombardment on semiconductors

2019

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When slow ions incident on a surface are neutralized, the excess potential energy is passed on to an electron inside the surface, leading to emission of secondary electrons. The microscopic description of this process, as well as the calculation of the secondary electron yield, is a challenging problem due to its complexity as well as its sensitivity to surface properties. One of the first quantitative descriptions was articulated in the 1950s by Hagstrum, who based his calculation on a parametrization of the density of states of the material. In this paper, we present a model for calculating the secondary electron yield, derived from Hagstrum's initial approach. We use first-principles density functional theory calculations to acquire the necessary input and introduce the concept of electron cascades to Hagstrum's model in order to improve the calculated spectra, as well as remove its reliance on fitting parameters. We apply our model to He + and Ne + ions incident on Ge(111) and Si(111) and obtain yield spectra that match closely to the experimental results of Hagstrum.

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The Organizational Voice

Cited by 24 publications

References 61 publications

Dry dilution refrigerator with 4He-1K-loop

Dry dilution refrigerator with 4He-1K-loop

Language disturbances in schizophrenia: the relation with antipsychotic medication

Quantitative modeling of secondary electron emission from slow-ion bombardment on semiconductors

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