THE PLANAR HALL EFFECT AND THE MAGNETORESISTANCE EFFECT IN THE AMORPHOUS SOFT MAGNETIC FILM Fe90-xCoxZr10

Abstract

In this work, the dependence of the planar Hall votage and the magnetoresistance on composition, temperature, and the applied magnetic field has been studied. All the measurements were made by the six probe method. From the results, the planar Hall votage and the magnetoresistance are shown to satisfy the phenomenological formula simultaneously: Vy = p0M2sin2θ and △ρ = cM2cos2θ, and we obtain an equation Vy = cρ2M2sin2θ. Morever, the change of the planar Hall votage of Co90Zr10 and Fe70 Co20Zr10 after their crystallization are just opposite, that is, the above-mentioned value of the Co-rich one increases, but that of the later one decreases.