2015
DOI: 10.1039/c5tc02209f
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The Raman enhancement effect on a thin GaSe flake and its thickness dependence

Abstract: Chemical enhancement is one of the important mechanisms in surface-enhanced Raman spectroscopy, however, its origin is still under debate. Recently, a two dimensional (2D) layered material has been thought to be a strong candidate to investigate the chemical mechanism of Raman enhancement because it has a flat surface, a well defined structure and is without the interference of electromagnetic enhancement. Herein we report systematic studies of the Raman enhancement effect on a gallium selenide (GaSe) flake by… Show more

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Cited by 41 publications
(34 citation statements)
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“…The total power at the sample was ~ 100 µW to prevent overheating and laser damage of the samples and the spot of the excitation laser was 1 µm in diameter. We can identify the silicon peak around 520 cm -1 and the GaSe peaks A 1g 1 , E 2g 1 and A 1g 2 around 130, 220 and 310 cm -1 [11,12,16].…”
Section: Raman and Photoluminescence Spectroscopymentioning
confidence: 88%
“…The total power at the sample was ~ 100 µW to prevent overheating and laser damage of the samples and the spot of the excitation laser was 1 µm in diameter. We can identify the silicon peak around 520 cm -1 and the GaSe peaks A 1g 1 , E 2g 1 and A 1g 2 around 130, 220 and 310 cm -1 [11,12,16].…”
Section: Raman and Photoluminescence Spectroscopymentioning
confidence: 88%
“…The intensity of A 1 1g mode decreases dramatically as shown in Table . The ratio A 1 1g and Si diminishes from 0.169 to 0.013, and the full wave at half maximum (FWHM) also increases, this result can be explained by the interaction between neighboring layers which becomes weak for thin nanoflakes . Furthermore, A 2 1g is almost invisible; it is hard to study the remaining small peak around 300 cm −1 , because Si peak may overlaps with GaSe spectra .…”
Section: Ratio (A11g/si) Ratio(e21g/si) and The Position Of E21g Peamentioning
confidence: 99%
“…The atomically thin (2D layer) exhibits unique valance band dispersion which makes it an interesting material for optoelectronic applications . The investigation of SERS effect of GaSe on the CuPc probe molecule demonstrated a 14‐fold increase in the Raman signal compared to a SiO 2 substrate (Figure b) . The effect of the thickness of GaSe on the enhancement, and demonstration of influence of excitation wavelength for interference enhancement, first layer effect, and resonant Raman scattering, confirms the dominant charge transfer process for the chemical enhancement.…”
Section: D‐transition Metal Chalcogenides For Sensingmentioning
confidence: 75%
“…The 2D‐layered, p‐type semiconducting GaSe, has been widely used in nonlinear optical applications . The in‐plane geometry of GaSe has a honeycomb‐like hexagonal structure (fourfold layer with the unique Se–Ga–Ga–Se sequence) ( Figure a).…”
Section: D‐transition Metal Chalcogenides For Sensingmentioning
confidence: 99%
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