The real demonstration of High-Quality Carbon Nano-Tubes (CNTs) as the electrical connection for the potential application in a vertical 3D integrated technology

Lu, Pen-Li; Li, Y.-R.; Yen, Cheng-Wei; Hung, Tai-Ho; Kao, Ching-Ti; Pu, Weihua; Chen, C.-C. A.; Lee, M.-H.; Liao, Ming-Han

doi:10.1109/ectc32862.2020.00247

Cited by 4 publications

(4 citation statements)

References 9 publications

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“…WC (8,4) [57] Co (6,5) [58] CoMn (6,5) [59] CoMo (6,5), (7,5) [60] The enrichment growth of metallic CNTs with specific chiral indices can be achieved by adjusting the surface structure of the catalyst. This is an ideal and straightforward method that is highly suitable for integration into interconnects for ICs.…”

Section: Dopingmentioning

confidence: 99%

“…Further, due to the stable structure of CNTs, problems in copper interconnects will be greatly improved, which increases the possibility for their substitution. Liao et al [5][6][7] demonstrated the application of CNTs as interconnection materials in 3D IC packaging, and successfully achieved the connection between two different silicon test vehicles through CVD growth of CNTs. These studies [5][6][7] have demonstrated the enormous potential of CNTs as a new generation of interconnection materials.…”

Section: Introductionmentioning

confidence: 99%

“…Liao et al [5][6][7] demonstrated the application of CNTs as interconnection materials in 3D IC packaging, and successfully achieved the connection between two different silicon test vehicles through CVD growth of CNTs. These studies [5][6][7] have demonstrated the enormous potential of CNTs as a new generation of interconnection materials. Currently, there are many methods for producing CNT, including arc discharge [8], laser ablation [9], and CVD [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

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Direct Application of Carbon Nanotubes (CNTs) Grown by Chemical Vapor Deposition (CVD) for Integrated Circuits (ICs) Interconnection: Challenges and Developments

Chu,

Xu,

Liang

2023

Nanomaterials

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With the continuous shrinkage of integrated circuit (IC) dimensions, traditional copper interconnect technology is gradually unable to meet the requirements for performance improvement. Carbon nanotubes have gained widespread attention and research as a potential alternative to copper, due to their excellent electrical and mechanical properties. Among various methods for producing carbon nanotubes, chemical vapor deposition (CVD) has the advantages of mild reaction conditions, low cost, and simple reaction operations, making it the most promising approach to achieve compatibility with integrated circuit manufacturing processes. Combined with through silicon via (TSV), direct application of CVD-grown carbon nanotubes in IC interconnects can be achieved. In this article, based on the above background, we focus on discussing some of the main challenges and developments in the application of CVD-grown carbon nanotubes in IC interconnects, including low-temperature CVD, metallicity enrichment, and contact resistance.

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Section: Dopingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Direct Application of Carbon Nanotubes (CNTs) Grown by Chemical Vapor Deposition (CVD) for Integrated Circuits (ICs) Interconnection: Challenges and Developments

Chu,

Xu,

Liang

2023

Nanomaterials

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“…Carbon is a chemical element with a wide variety of structures, leading to a broad range of physical properties. These remarkable characteristics are attracting increasing attention, and have led to numerous studies of carbon-containing materials [ 1 , 2 , 3 ]. Fullerenes are one of the forms of carbon that have stimulated study of these materials and similar structures, and have practically formed a new branch in themselves in materials science and nanotechnology.…”

Section: Introductionmentioning

confidence: 99%

Noise and Electrical Characteristics of Composites Filled with Onion-Like Carbon Nanoparticles

et al. 2021

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Polymer matrix composites filled with carbon nanoparticles are promising materials for many applications, but their properties strongly depend on the particle features, concentration and distribution within the matrix. Here we present a study of the electrical resistivity and the low-frequency voltage fluctuation of composites based on epoxy resin filled with onion-like carbon (OLC) of different sizes (40–250 nm) above the percolation threshold, which should clarify the electrical transport characteristics in these materials. Electrical measurements were performed in the temperature range of 78 to 380 K, and voltage noise analysis was carried out from 10 Hz to 20 kHz. At low temperatures (below 250 K), thermally activated tunneling, variable-range hopping and generation–recombination of charge carriers take place. Above 250 K, the rapid expansion of the matrix with the temperature increases the resistivity, but above ~330 K, the conductivity of the matrix becomes significant. Quasi one-dimensional electrical transport is observed in composites with the smallest particles (40 nm), while in composites with the largest particles (220–250 nm), the dimensionality of the electrical transport is higher. The temperature dependence of the electrical conductivity of composites with smaller particles is more sensitive to matrix expansion.

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The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology

Yen

Chang

Chen

et al. 2022

IEEE Trans. Electron Devices

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The real demonstration of High-Quality Carbon Nano-Tubes (CNTs) as the electrical connection for the potential application in a vertical 3D integrated technology

Cited by 4 publications

References 9 publications

Direct Application of Carbon Nanotubes (CNTs) Grown by Chemical Vapor Deposition (CVD) for Integrated Circuits (ICs) Interconnection: Challenges and Developments

Direct Application of Carbon Nanotubes (CNTs) Grown by Chemical Vapor Deposition (CVD) for Integrated Circuits (ICs) Interconnection: Challenges and Developments

Noise and Electrical Characteristics of Composites Filled with Onion-Like Carbon Nanoparticles

The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology

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