The Research on over current switch-off simulation of IGBT level in parallel connection

Abstract

Abstract：IGBT chips are basic structure of power electronic devices in the power grid system. The IGBT module with high current capability needs multi chips parallel connection. Because there are different performance parameters of the IGBT chips in the Wafer, it is necessary to select the parameters of the IGBT chips for the IGBT modules to make the performance parameters of chips as consistent as possible. However, it is unknown that what the influence of performance parameter differences between IGBT chips on the overall performance of the module such as IGBT modules' switch-off and RBSOA characteristics is. In addition, switching state of each single IGBT chip is not monitored when the whole module is on working state. This paper is trying to demonstrate a method to research the multi parallel chips on the performance of different parameters effects of each single IGBT chip switch-off Process, which is based on the T-CAD software tool.