The reversible voltage-induced initial resistance in the negative resistance sandwich structure

Nielsen, Paul; Bashara, N. M.

doi:10.1109/t-ed.1964.15319

Cited by 27 publications

(12 citation statements)

References 3 publications

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“…Resistive switching was discovered in 1960s in oxides sandwiched between metal electrodes . It had been realized that this effect was promising for non‐volatile memory applications . Since then resistive switching phenomena has puzzled a lot of scientists.…”

Section: Introductionmentioning

confidence: 99%

Resistive switching in manganese oxide with nonlineardependence of the local resistivity on the oxygen‐vacancy concentration

Boylo

2017

Physica Status Solidi (b)

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The present paper examines the influence of a nonlinear relationship between the local oxygen‐vacancy concentration and the local resistivity on resistive switching effects in complex oxides. The continuity equation has been used as a model for the motion of oxygen vacancies when a periodic time‐dependent electrical current is applied. The question of endurance of the switching cycles is discussed. It is found that nonlinearity of the resistivity–concentration dependence enhances the endurance.

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Section: Introductionmentioning

confidence: 99%

Resistive switching in manganese oxide with nonlineardependence of the local resistivity on the oxygen‐vacancy concentration

Boylo

2017

Physica Status Solidi (b)

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“…Filamentary memories (Figure 2), also known as resistive random access me (RRAM) are based on the reversible formation and disruption of a conductive filam an insulator sandwiched between two metal electrodes when an electric field is a This electrical behavior was first reported in the 1960s [41,42] and was largely s until the early 1980s for memory device applications. In the 2000s, new classes of appeared and the interest in this technology returned [43].…”

Section: Filamentary Memorymentioning

confidence: 99%

Advances in Emerging Memory Technologies: From Data Storage to Artificial Intelligence

Molas

Nowak

2021

Applied Sciences

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This paper presents an overview of emerging memory technologies. It begins with the presentation of stand-alone and embedded memory technology evolution, since the appearance of Flash memory in the 1980s. Then, the progress of emerging memory technologies (based on filamentary, phase change, magnetic, and ferroelectric mechanisms) is presented with a review of the major demonstrations in the literature. The potential of these technologies for storage applications addressing various markets and products is discussed. Finally, we discuss how the rise of artificial intelligence and bio-inspired circuits offers an opportunity for emerging memory technology and shifts the application from pure data storage to storage and computing tasks, and also enlarges the range of required specifications at the device level due to the exponential number of new systems and architectures.

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“…σ met and σ ins ,for our simulation are extracted in S2. 33,34 According to (2), the conductivity of MIT material is a function of percolation probabilty which then in turn is a function of gate voltage by (1). We used percolation as the state equation of memcapacitor and performed its DC and frequency analysis (later in the text).…”

Section: Model Is Then Extended Into Vertical Cascaded Version Which mentioning

confidence: 99%

Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device

Khan

Lee

2016

AIP Advances

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Memcapacitor model based on its one possible physical realization is developed and simulated in order to know its limitation before making a real device. The proposed device structure consists of vertically stacked dielectric layer and MoS2 monolayer between two external metal plates. The Metal Insulator Transition (MIT) phenomenon of MoS2 monolayer is represented in terms of percolation probabilty which is used as the system state. Cluster based site percolation theory is used to mimic the MIT of MoS2 which shows slight discontinuous change in MoS2 monolayer conductivity. The metal to insulator transition switches the capacitance of the device in hysterical way. An Ioffe Regel criterion is used to determine the MIT state of MoS2 monolayer. A good control of MIT time in the range of psec is also achieved by changing a single parameter in the model. The model shows memcapacitive behavior with an edge of fast switching (in psec range) over the previous general models. The model is then extended into vertical cascaded version which behaves like a ternary device instead of binary.

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The reversible voltage-induced initial resistance in the negative resistance sandwich structure

Cited by 27 publications

References 3 publications

Resistive switching in manganese oxide with nonlineardependence of the local resistivity on the oxygen‐vacancy concentration

Resistive switching in manganese oxide with nonlineardependence of the local resistivity on the oxygen‐vacancy concentration

Advances in Emerging Memory Technologies: From Data Storage to Artificial Intelligence

Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device

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