The Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle

Abstract

Method for investigating threshold field of charge injection at electrode/dielectric interfaces by space charge observation Appl. Phys. Lett. 101, 172902 (2012) Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu2O) thin-films J. Appl. Phys. 112, 084508 (2012) Preserving stable 100% spin polarization at (111) heterostructures of half-metallic Heusler alloy Co2VGa with semiconductor PbS J. Appl. Phys. 112, 083710 (2012) Thermal conduction properties of Mo/Si multilayers for extreme ultraviolet optics A Si/Pd ohmic contact scheme to n-GaP ͑nϳ5ϫ10 17 cm Ϫ3 ͒ was investigated using Rutherford backscattering spectrometry, transmission electron microscopy, energy dispersive x-ray spectrometry, and the Cox-Strack measurement. Contact resistivities of ϳ2ϫ10 Ϫ4 ⍀ cm 2 are obtained for annealing temperatures ranging from 350 to 650°C. This contact is thermally stable at 550°C. The ohmic contact formation mechanism is rationalized in terms of the solid phase regrowth of an n ϩ layer and the solid phase epitaxy of a Si layer.

Work function of polytypic gallium phosphide nanowires

“…Based on the literature, the Pd/Si contact base is preferred to apply with NWs. The contacts were formed by depositing of Ni/Pd/Si/Al consistently with thicknesses of 3 nm, 15 nm, 30 nm, and 200 nm, respectively 26 . The structure was annealed after metal deposition under different temperatures from 175 to 350 • C. The I-V curve obtained in such geometry is shown in Figure 4 from which it follows that 350 • C is sufficient annealing temperature for the contacts to become ohmic.…”