2006
DOI: 10.1016/j.physb.2005.12.258
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The structure and electronic property of BN nanotube

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Cited by 57 publications
(17 citation statements)
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“…Jalili and R. Vaziri effect and therefore, it is more important in the creation process of BNNTs with small diameter rather than large diameter. Comparison of Figures 7(f ) and 8(f ) shows that in BNNTs with small diameter, the band gap due to the hybridization between the * and * states is lower than those with a large diameter, which is originated from the larger curvature and is in good agreement with previous predictions [19]. We found that s electrons of N atom are mainly localized at À13 to À19 eV, especially for structures with large n, while B atom electrons are well delocalized.…”
supporting
confidence: 89%
See 1 more Smart Citation
“…Jalili and R. Vaziri effect and therefore, it is more important in the creation process of BNNTs with small diameter rather than large diameter. Comparison of Figures 7(f ) and 8(f ) shows that in BNNTs with small diameter, the band gap due to the hybridization between the * and * states is lower than those with a large diameter, which is originated from the larger curvature and is in good agreement with previous predictions [19]. We found that s electrons of N atom are mainly localized at À13 to À19 eV, especially for structures with large n, while B atom electrons are well delocalized.…”
supporting
confidence: 89%
“…The structure and electronic properties of BNNTs have been investigated theoretically [11][12][13][14][15][16][17][18][19]. Unzipping CNTs with controlled structure is a new method to fabricate GNRs which can be used for practical applications in electronics [20,21].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, BNNTs are normally insulating. However, flattening deformation [122] or decrease in tube diameter down to 0.4-1 nm or less, [171] or application of a transverse electric field (Stark effect) [30,50] may dramatically reduce the bandgap, as revealed by theoretical calculations. For example, using the local density approximation (LDA) for a single-layered (22,22) BNNT with an intrinsic bandgap of 4.5 eV, a transverse electric field of 0.1 V Å -1 was found to reduce the bandgap to 2.25 eV, whereas a field of 0.19 V Å -1 even eliminated the bandgap entirely.…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…Finally, we studied the influence of O 2 molecule adsorptions on the electronic properties of BNNT. The calculated band-gap of the clean perfect (5,5) BNNT is about 5.42 eV 25 but the calculated band gap of the hydrogenated (5, 5) boron nitride nanotube (B 25 H 20 N 25 ) is 6.31 eV. The effects of oxygen molecule on adsorptions energies in BNNTs relate to their electronic structure.…”
Section: Electronic Propertiesmentioning
confidence: 94%