The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)

Saidov, A. S.; Leyderman, A. Yu.; Karshiev, A. B.

doi:10.1134/s1063785016070270

Cited by 16 publications

(6 citation statements)

References 7 publications

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“…The approaches that were developed in this work can be useful for explaining the thermovoltaic effect in a wide range of materials, for example, in germanium-silicon films heavily doped with titanium [27], variable-gap solid solutions of Si x Ge 1−x [11], in which this effect has been detected in recent years.…”

Section: Development Of Physical Mechanisms Of Temperature Dependencementioning

confidence: 99%

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Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

et al. 2018

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A model of the thermovoltaic effect emergence in ZnO/ZnO (Me = Cu, Fe), sandwich structures has been developed in the article. The samples were made by the sol-gel method. When they were uniformly heated in a laboratory furnace in the temperature range of 200–300 °C, there an electromotive force (EMF) of −7~10 mV, not associated with the Seebeck effect, emerged. The developed physical mechanisms of the effect emergence consist of the following well-known fact: iron and copper coexist in zinc oxide in two states, namely, Fe2+ and Fe3+ (donor), and Cu2+ and Cu+ (acceptor). During the heating of the ZnO/ZnO–Me system, the concentration of charge carriers in the layers will increase, while in the upper layer its value will be larger because of the presence of electrically active impurities. At room temperatures, Coulomb forces retain an electron that is located on the Fe2+ ion, as well as a hole on Cu2+ ion, and the main states undergo ionization. However, as the temperature increases, the carrier concentration can reach a critical level, when they can screen the ion charge (the Debye screening radius decreases to the Bohr radius of the impurity). In this case, an abrupt collective endothermic process of ionization of multivalent impurities takes place, accompanied by the appearance of a concentration gradient of free carriers in the sample, and accordingly, the emergence of an electromotive force. Quantitative calculations of the critical temperature, at which the onset of EMF generation is observed, performed within the framework of the developed models.

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Section: Development Of Physical Mechanisms Of Temperature Dependencementioning

confidence: 99%

“…In particular, the appearance of a thermovoltaic response in two-layer thin-film ZnO/ZnO-Fe structures with a maximum modulo value of 1200 µV at a temperature of 673 K is shown in [10]. Somewhat later, this effect was observed in a solid solution Si 1−x Ge x (0 ≤ x ≤ 1) and in nSi-pSi 1−x Ge x heterostructures [11,12].…”

Section: Introductionmentioning

confidence: 99%

Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

et al. 2018

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“…1 (а), и на плёнках по схеме рис. 1 (б) в указанном температурном диапазоне оказались выше, чем полученные в [15], где также измерялись свойства нагреваемых варизонных образцов Si-Ge.…”

Section: описание и анализ результатовunclassified

“…Необходимо отметить, что при этом температурный ход величины тока и напряжения в нашем случае также резко отличается от наблюдаемых в[15]. Так, семейство темновых ВАХ (рис.…”

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Особенности технологии и некоторые свойства гетероэпитаксиальных структур Si-Ge/Si

Abdurakhmanov¹,

Ashurov²,

Кучканов³

et al. 2020

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Экспериментально обнаружено появление термо-эдс на нагреваемых р-n гетероструктурах, содержащих на поверхности кремниевых подложек осажденные из газовой фазы плёнки твёрдого раствора Si-Ge, сильно легированные титаном. Появление термо-эдс объяснено тепловольтаическим эффектом, то есть генерацией носителей заряда за счёт поглощения субзонных фотонов с участием глубоких энергетических уровней, обусловленных как структурными дефектами Si-Ge плёнок, так и примесью титана. Показано, что при нагреве р-n структур до 800 К величина эдс составляет несколько мВ, а дополнительная локальная засветка поверхности приводит к увеличению тока в 15 раз.

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“…In this structure, the generation of electromotive force resulted directly from the artificial creation of a gradient of excess samarium ions in a parallelepipedal SmS polycrystalline sample. Subsequently, thermovoltaic effect was discovered in other materials -SmS-based heterostructures [3], ZnO-based compositions [4,5] as well as Si-and Ge-based structures [6].…”

Section: Introductionmentioning

confidence: 99%

Thermovoltaic Effect in a Multilayer Junction Structure with an Oxide Insulation Barrier

Turkiewicz¹,

Prociów²,

Dziedzic³

2020

ACTA POLYTECH HUNG

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The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)

Cited by 16 publications

References 7 publications

Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

Development of a Physical Model of Thermovoltaic Effects in the Thin Films of Zinc Oxide Doped with Transition Metals

Особенности технологии и некоторые свойства гетероэпитаксиальных структур Si-Ge/Si

Thermovoltaic Effect in a Multilayer Junction Structure with an Oxide Insulation Barrier

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