Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

Abstract

By applying %3 compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of tunneling graphene nanoribbon field-effect transistor (T-GNRFET), we propose a new local-strained source and channel (LSSC) T-GNRFET. Quantum simulations of the proposed structure have been done in mode-space non-equilibrium Green's function (NEGF) approach in ballistic regime. Simulation results show that in comparison with the conventional T-GNRFET of the same dimensions, the ONcurrent of the proposed structure has been improved considerably. Besides, the proposed structure enjoys better analog characteristics such as transconductance (g m ) and unity-gain frequency (f t ).

Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

“…An interesting matter for further computational investigations is the synergy of MFMIS or MFIS-based configurations with some modern enhancement methods such as gate work-function engineering, 41 global optimization, 49 dielectric engineering, 16,50 and chemical and electrostatic doping engineering, 51,52 in order to improve some demerits such as mitigating the leakage current, suppressing the ambipolar behavior, and reducing the off-current. More importantly, emerging nanoscale FETs based on graphene sheet/nanoribbon [53][54][55][56][57][58][59] can also be endowed with MFMIS/MFIS configurations to boost their analog and switching performance while paving the way toward modern applications.…”