Theoretical electronic band structures and transport in InAs/GaSb type II nanostructure superlattice for medium infrared detection

Benchtaber, Nassima; Nafidi, A.; Barkissy, Driss; Boutramine, Abderrazak; Benaadad, Merieme; Melkoud, Samir; koujane, Rachid Ben; Es-Salhi, Es-saïd

doi:10.1016/j.matpr.2019.08.069

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…Nanostructure has very a good application prospect in microelectronic devices and have received wide attention from field scholars around the globe in recent years [1][2][3][4][5][6][7][8][9][10]. With the development of modern electronic equipment, the design of such equipment develops toward the directions of highly integrated and multifunctional, and the heat dissipation problem during operation rises consequently [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Thermal Conductivity of Nanostructure in Microelectronic Equipment and the Enhancement of Its Thermo-Physical Properties

Li¹,

Jing²,

Liu³

et al. 2022

IJHT

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To optimize the heat dissipation performance of microelectronic equipment, optical instrument, and optoelectronic devices, it’s necessary to explore the heat transfer mechanism of the nanostructure in them, however, due to the limitation of the research objects, there isn’t a uniform simulation method for the thermo-physical properties of such nanostructure. Therefore, this paper aims to study the thermo-physical properties of nanostructure in microelectronic equipment. At first, by structuring Si super lattice nanowires in a specific direction and then using the Ge atoms to replace the Si atoms in the nanowires, this paper built a model for the periodic Si/Ge super lattice nanowires. Then, this paper performed integral operation on the dynamic equations of the two types of atoms using the time integration algorithm to attain the trajectories of Si and Ge atoms in the nanowire structure of the microelectronic equipment, and discussed the influence of the size and geometrical shape of the cross section of nanowires on thermal conductivity. After that, this paper simulated the structure of the nano-scale SiC material, selected appropriate cut-off radius, and optimized the structure of the nanostructure model based on the Discover Minimization module. At last, the thermal conductivity of the nanostructure was calculated and its thermo-physical properties were analyzed.

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Section: Introductionmentioning

confidence: 99%

Thermal Conductivity of Nanostructure in Microelectronic Equipment and the Enhancement of Its Thermo-Physical Properties

Li¹,

Jing²,

Liu³

et al. 2022

IJHT

View full text Add to dashboard Cite

show abstract

Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories

et al. 2022

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Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures. Among these compounds, InAs/GaSb type II superlattices represent the most commonly studied materials. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of the 1990s gave a new impact and interest in the development of infrared detector structures within academic and national laboratories. InAs/GaSb superlattices are a type II disconnected band structure with electrons and holes confined in the InAs and GaSb layers, respectively. The electron miniband and hole miniband can be regulated separately by adjusting the thickness of InAs and GaSb layers, which facilitates the design of superlattice structures and optimizes the value of band offset. In recent years, both domestic and foreign researchers have made many attempts to quickly and accurately predict the bandgaps of superlattice materials before superlattice materials grow. These works constituted a theoretical basis for the effective utilization of the InAs/GaSb system in material optimization and designing new SL structures; they also provided an opportunity for the preparation and rapid development of InAs/GaSb T2SLs. In this paper, we systematically review several widely used methods for simulating superlattice band structures, including the k·p perturbation method, envelope function approximation, empirical pseudopotential method, empirical tight-binding method, and first-principles calculations. With the limitations of different theoretical methods proposed, the simulation methods have been modified and developed to obtain reliable InAs/GaSb SL energy band calculation results. The objective of this work is to provide a reference for designing InAs/GaSb type II superlattice band structures.

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Theoretical electronic band structures and transport in InAs/GaSb type II nanostructure superlattice for medium infrared detection

Cited by 2 publications

References 6 publications

Thermal Conductivity of Nanostructure in Microelectronic Equipment and the Enhancement of Its Thermo-Physical Properties

Thermal Conductivity of Nanostructure in Microelectronic Equipment and the Enhancement of Its Thermo-Physical Properties

Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories

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