Theoretical Predictions for the Intrinsic Converse Longitudinal Piezoelectric Constants of Lead Zirconate Titanate Epitaxial Films

Ouyang, Jun; Ramesh, R.; Roytburd, Alexander L.

doi:10.1002/adem.200400214

Cited by 13 publications

(5 citation statements)

References 13 publications

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“…[24,25] It was found that a (001) oriented film has the largest intrinsic d 33 for both tetragonal and rhombohedral compositions, similar to the results calculated for the bulk materials. [26,27] The with the calculations based on the assumption that the 90°do-main walls are mobile.…”

Section: Discussionsupporting

confidence: 82%

Engineering of Self‐Assembled Domain Architectures with Ultra‐high Piezoelectric Response in Epitaxial Ferroelectric Films

Ouyang

Slusker

Levin

et al. 2007

Adv Funct Materials

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Substrate clamping and inter‐domain pinning limit movement of non‐180° domain walls in ferroelectric epitaxial films thereby reducing the resulting piezoelectric response of ferroelectric layers. Our theoretical calculations and experimental studies of the epitaxial PbZrxTi1–xO3 films grown on single crystal SrTiO3 demonstrate that for film compositions near the morphotropic phase boundary it is possible to obtain mobile two‐domain architectures by selecting the appropriate substrate orientation. Transmission electron microscopy, X‐ray diffraction analysis, and piezoelectric force microscopy revealed that the PbZr0.52Ti0.48O3 films grown on (101) SrTiO3 substrates feature self‐assembled two‐domain structures, consisting of two tetragonal domain variants. For these films, the low‐field piezoelectric coefficient measured in the direction normal to the film surface (d33) is 200 pm V–1, which agrees well with the theoretical predictions. Under external AC electric fields of about 30 kV cm–1, the (101) films exhibit reversible longitudinal strains as high as 0.35 %, which correspond to the effective piezoelectric coefficients in the order of 1000 pm V–1 and can be explained by elastic softening of the PbZrxTi1–xO3 ferroelectrics near the morphotropic phase boundary.

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Section: Discussionsupporting

confidence: 82%

Engineering of Self‐Assembled Domain Architectures with Ultra‐high Piezoelectric Response in Epitaxial Ferroelectric Films

Ouyang

Slusker

Levin

et al. 2007

Adv Funct Materials

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“…Common applications of PTFs are composed of surface acoustic wave devices [6,7], non-volatile random access memory devices [8,9], infrared sensors [10,11], optical waveguide modulators [12,13], and nanogenerators for energy harvesting [14,15]. In addition, most PTFs are complex ceramic thin films exhibiting complex stoichiometry, co-existence of multiple phases, and various domain morphology, which greatly contribute to functional properties, such as piezoelectricity, dielectricity, and ferroelectricity [16,17]. Therefore, PTFs have drawn great attention from both electronic engineering and materials engineering communities.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric and Ferroelastic Domain Related Formation and Influential Mechanisms of Vapor Deposited Piezoelectric Thin Films

et al. 2021

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Compared to the bulk piezoelectric materials counterpart, piezoelectric thin films (PTFs) possess advantages of smaller size, lower power consumption, better sensitivity, and have broad application in advanced micro-electro-mechanical system (MEMS) devices. However, the performance of MEMS transducers and actuators are largely limited by PTFs piezoelectric properties. In this review, we focus on understanding structure-property relationship of vapor deposited PTFs, with emphasis on the effect of strain energy and electrostatic energy in thin films, especially, energy relaxation induced misfit dislocation and ferroelectric (FS) and ferroelastic (FC) domain formation mechanisms. We then discuss the microstructure of these domains and their influential mechanisms on piezoelectric properties, as well as the domain engineering strategies (i.e., internal and external stimuli). This review will motivate further experimental, theoretical, and simulation studies on FS and FC domain engineering in PTFs.

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“…Achieving epitaxial growth with (100) orientation is known to maximize the piezoelectric response compared to the polycrystalline films [18][19] . However the piezoelectric response is still drastically reduced compared to intrinsic piezoelectric response due to clamping of the thin film by the substrate [27][28][29] . On application of an electric field in the direction normal to the PZT film surface (longitudinal direction), the longitudinal expansion of the PZT film is coupled to a contraction in the direction parallel to its surface (transverse direction).…”

Section: Introductionmentioning

confidence: 99%

Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substrates

Chopra

Bayraktar

Nijland

et al. 2017

Sci Rep

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Renewed interest has been witnessed in utilizing the piezoelectric response of PbZr0.52Ti0.48O3 (PZT) films on glass substrates for applications such as adaptive optics. Accordingly, new methodologies are being explored to grow well-oriented PZT thin films to harvest a large piezoelectric response. However, thin film piezoelectric response is significantly reduced compared to intrinsic response due to substrate induced clamping, even when films are well-oriented. Here, a novel method is presented to grow preferentially (100)-oriented PZT films on glass substrates by utilizing crystalline nanosheets as seed layers. Furthermore, increasing the repetition frequency up to 20 Hz during pulsed laser deposition helps to tune the film microstructure to hierarchically ordered columns that leads to reduced clamping and enhanced piezoelectric response evidenced by transmission electron microscopy and analytical calculations. A large piezoelectric coefficient of 250 pm/V is observed in optimally tuned structure which is more than two times the highest reported piezoelectric response on glass. To confirm that the clamping compromises the piezoelectric response, denser films are deposited using a lower repetition frequency and a BiFeO3 buffer layer resulting in significantly reduced piezoelectric responses. This paper demonstrates a novel method for PZT integration on glass substrates without compromising the large piezoelectric response.

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Theoretical Predictions for the Intrinsic Converse Longitudinal Piezoelectric Constants of Lead Zirconate Titanate Epitaxial Films

Cited by 13 publications

References 13 publications

Engineering of Self‐Assembled Domain Architectures with Ultra‐high Piezoelectric Response in Epitaxial Ferroelectric Films

Engineering of Self‐Assembled Domain Architectures with Ultra‐high Piezoelectric Response in Epitaxial Ferroelectric Films

Ferroelectric and Ferroelastic Domain Related Formation and Influential Mechanisms of Vapor Deposited Piezoelectric Thin Films

Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substrates

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