Theoretical studies on light emission characteristics of high-efficiency BInGaN/GaN quantum well structures with blue spectral range

Park, Seoung–Hwan; Ahn, Doyeol

doi:10.1016/j.spmi.2016.05.024

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…14 Park and Ahn examined wurtzite BInGaN/GaN quantum wells using multiband effective mass theory and report a lower mismatch to GaN than InGaN and a large reduction in the internal polarization field. 15 This reduction increases carrier wave-function overlap and ultimately the predicted efficiency of light production. However, it is necessary to expand on this existing work using more accurate computational methods and accouting for compositional disorder in random alloys.…”

Section: Introductionmentioning

confidence: 99%

Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys

Greenman

Williams

Kioupakis

2019

Journal of Applied Physics

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InGaN light-emitting diodes (LEDs) are more efficient and cost effective than incandescent and fluorescent lighting, but lattice mismatch limits the thickness of InGaN layers that can be grown on GaN without performance-degrading dislocations. In this work, we apply hybrid density functional theory calculations to investigate the thermodynamic stability, lattice parameters, and band gaps of wurtzite and zincblende quaternary BInGaN alloys. We find that the wurtzite phase is more stable and can be latticematched to GaN for BInGaN compositions containing up to ~30% boron. The lattice match with GaN decreases strain and enables thicker active layers that mitigate Auger recombination and increase the efficiency of the LEDs. The band gap of the alloy remains tunable throughout the visible spectrum. Our results indicate that BInGaN alloys are promising alternatives to InGaN for high-efficiency, high-powerLEDs.

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Section: Introductionmentioning

confidence: 99%

Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys

Greenman

Williams

Kioupakis

2019

Journal of Applied Physics

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“…They reported a lower mismatch to GaN than InGaN, and a reduction of the polarization fields. 24 Assali et al examined ordered BInGaN in the metastable zinc blende phase with density functional theory (DFT). They found a nearlattice-match to GaN for a composition with the same 2:3 B:In ratio as our estimate, and a small increase of the gap (0.1-0.3 eV) compared to InGaN of the same In content.…”

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confidence: 99%

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

Williams

Kioupakis

2017

Applied Physics Letters

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InGaN-based visible LEDs find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, highefficiency visible LEDs with thick active regions. In this work we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75-3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.InGaN light-emitting diodes (LEDs) with an electricity-to-light conversion efficiency of ~39% provide large efficiency gains and cost reductions compared to incandescent and fluorescent light sources. 1 However, InGaN LEDs suffer from decreasing internal quantum efficiency at high currents (efficiency droop), particularly at longer wavelengths (green gap). The cause of the droop has been extensively studied, with Auger recombination identified as a major loss mechanism. 2 For equal electron and hole densities, the Auger recombination rate is equal to the carrier density cubed times a material-dependent Auger coefficient ! . Since the Auger coefficient is an intrinsic property of InGaN that does not depend strongly on composition, temperature, or strain, 3 the carrier density at a given current density must be lowered to reduce the Auger losses.Increasing the active-region volume is a straightforward approach to reduce the carrier density and hence the Auger loss, yet growth challenges limit its practicality. Devices using a single thick InGaN layer exhibit higher high-power efficiency than thinner quantum wells both for polar 4 and for semipolar 5 growth orientations. The thickness of InGaN active layers is however limited by the lattice mismatch with the underlying GaN layers, and the subsequent appearance of performance-degrading dislocations. On the other hand, the efficiency of multiple-quantum-well (MQW) structures is...

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Strain in BInGaN thin layers grown in nonpolar and semipolar directions

Yıldırım

2022

Eur. Phys. J. Plus

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Theoretical studies on light emission characteristics of high-efficiency BInGaN/GaN quantum well structures with blue spectral range

Cited by 3 publications

References 16 publications

Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys

Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

Strain in BInGaN thin layers grown in nonpolar and semipolar directions

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