Theoretical Study of the Effect of Stresses on Effective Masses in the InAs/InAsSb Type-II Superlattice

Manyk, Tetiana; Rutkowski, Jarosław; Kopytko, M.; Martyniuk, Piotr

doi:10.3390/engproc2022021016

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“…Electrons for InAs/InAs 1− x Sb x T2SL are confined in InAs, while holes in InAs 1− x Sb x . The band structure calculation is an important step of detector modeling [ 13 ]. The T2SLs bandgap energy is defined as the energy between the bottom of the lowest electron mini-band and the top of the highest hole mini-band (see Figure 1 ).…”

Section: Methodsmentioning

confidence: 99%

“…The bandgap energy was extracted from the quadratic absorption coefficient approximation [ 13 ]. The energy gap determined in this way is consistent with the value calculated from the energy bands (see Figure 1 ).…”

Section: Methodsmentioning

confidence: 99%

“…These simulations provide a good estimate of the bandgap energy in InAs/InAs 1− x Sb x T2SLs system. The parameters of InAs, InAs 1− x Sb x and GaSb layers used in InAs/InAs 1− x Sb x T2SL simulation procedure were taken from papers [ 5 , 13 , 14 , 15 , 16 , 17 , 18 ]. The bandgap energy versus temperature is expressed by the Varshni equation [ 7 ].…”

Section: Methodsmentioning

confidence: 99%

“…The bandgap energy versus temperature is expressed by the Varshni equation [ 7 ]. All parameters of the ternary materials InAs 1− x Sb x used for the theoretical simulation were estimated based on the bulk parameters for binary compounds (InAs and InSb) [ 13 ].…”

Section: Methodsmentioning

confidence: 99%

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Determination of the Strain Influence on the InAs/InAsSb Type-II Superlattice Effective Masses

Manyk

Rutkowski

Kopytko

et al. 2022

Sensors

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A3B5 materials used for the superlattice (SL) fabrication have properties that enable the design of devices optimized for infrared (IR) detection. These devices are used in the military, industry, medicine and in other areas of science and technology. The paper presents the theoretical assessment and analysis of the InAs/InAs1−xSbx type-II superlattice (T2SL) (grown on GaSb buffer layer) strain impact on the bandgap energy and on the effective masses of electrons and holes at 150 K. The theoretical research was carried out with the use of the commercial program SimuApsys (Crosslight). The k·p method was adopted in T2SL modeling. Luttinger coefficients (γ1, γ2 and γ3) were assessed assuming the Kane coefficient F = 0. The bandgap energy of ternary materials (InAsxSb1−x) was determined assuming that the bowing parameter (bg) for the above-mentioned temperature is bg = 750 meV. The cutoff wavelength values were estimated based on the theoretically determined absorption coefficients (from approximation the quadratic absorption coefficient). The bandgap energy was calculated according to the following formula: Eg = 1.24/λcutoff. The theoretical simulations allowed us to conclude that the strain in T2SL causes the Eg shift, which also has an impact on the effective masses me and mh, playing an important role for the device’s optical and electrical performance. The T2SLs-simulated results at 150 K are comparable to those measured experimentally.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%