Theoretical verification of using the Ga-doped ZnO as a charge transport layer in an inorganic perovskite solar cell

Abstract

The study encompasses the idea to employ a single bandgap-graded transport layer in lieu of two different (transparent conducting oxide(TCO) and electron transport layer(ETL) layers in the perovskite solar cell to increase the overall device's functionality using Numerical simulation. The thickness and defect density of the absorber layer have been varied to identify the optimal cell parameter values. Maximum power conversion efficiency (PCE) has been recorded as 22.17 % at 1E13 cm-3 defect density in the absorber. These findings demonstrate the numerical modelling limitations for the relationship between defect mechanism and performance. The activation energy and effects of series resistance (Rs) on solar cells have also been assessed. The temperature degradation gradient of the proposed structure GZO/CsGeI3/NiO/Au has been found 3% only with a PCE of 22.17% that validates the concept of using bandgap graded transport layer and paves the way for a new era for perovskite research.

Exploring the effect of interface properties between CeO x electron transport layer and MAPbI3 perovskite layer on solar cell performances through numerical simulation

“…have been studied and used extensively as ETL materials in different PSC structures. 14,15) Among these materials, though TiO 2 is the mostly used ETL it has some limitations such as it requires high temperatures for deposition, shows UV photo instability etc. 14,[16][17][18][19] On the other hand, ZnO is not chemically stable enough as it reacts with weak acids and bases that affects its morphology of the surface resulting.…”