Theory of solid-state laser mode locking by coherent semiconductor quantum-well absorbers

Kalosha, V. P.; Müller, Michael; Herrmann, Joachim

doi:10.1364/josab.16.000323

Cited by 26 publications

(15 citation statements)

References 51 publications

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“…For the sake of staying in framework of analytical approach we used a two-level model for quantum-well semiconductor absorber. This assumption is valid for quantum-confined semiconductor structures utilized in mode-locked fs-lasers (see, for example, [4,10]; last work contains some generalizations of model in framework of numerical analysis).…”

Section: Modelmentioning

confidence: 99%

“…As is known [4], the main mechanism of destabilization of fs-pulses is the noise generation as result of loss saturation in absorber. In the case of 2π-pulse formation, a Rabi flopping of the absorber population suppresses the noise behind the pulse tail, that stabilizes fs-generation [10].…”

Section: Now Let Consider the Eq (4) Without Klm Spm And Gvd (σ =mentioning

confidence: 99%

“…The stability of the solution results from the self-induced transparency in absorber, when the pulse propagates in the condition of the positive net-gain but noise is suppressed due to Rabi flopping of the absorber population. We do not analyze the automodulational stability [16] of the solution since it has been demonstrated directly by the numerical simulation in [10].…”

Section: Now Let Consider the Eq (4) Without Klm Spm And Gvd (σ =mentioning

confidence: 99%

“…A coherent absorber mode locking has been analyzed in refs. [7][8][9][10]. In particular, it was shown in [7][8][9] that the dynamical gain saturation is essential for the coherent quasi-soliton generation in the lasers.…”

Section: Introductionmentioning

confidence: 99%

“…However, the dynamical gain saturation is negligible in femtosecond solid-state lasers, where the dominating nonlinear factors are the self-phase modulation (SPM) and the self-focusing. Numerical simulations [10] have demonstrated the generation of fs-pulses of self-induced transparency in solid-state laser with semiconductor quantum-well absorber in the absence of KLM. However, as was shown in [11], the self-focusing is essential in femtosecond time domain and should be taken into account in the analysis.…”

Section: Introductionmentioning

confidence: 99%

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Theory of sub-10-fs generation in Kerr-lens mode-locked solid state lasers with a coherent semiconductor absorber

Калашников

Poloyko

2001

Laser Optics 2000: Ultrafast Optics and Superstrong Laser Fields

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The results of the study of ultra-short pulse generation in continuous-wave Kerrlens mode-locked (KLM) solid-state lasers with semiconductor saturable absorbers are presented. The issues of extremely short pulse generation are addressed in the frames of the theory that accounts for the coherent nature of the absorber-pulse interaction. We developed an analytical model that bases on the coupled generalized Landau-Ginzburg laser equation and Bloch equations for a coherent absorber. We showed, that in the absence of KLM semiconductor absorber produces 2π -nonsech-pulses of self-induced transparency, while the KLM provides an extremely short sech-shaped pulse generation. 2π-and π -sech-shaped solutions and variable-area chirped pulses have been found. It was shown, that the presence of KLM removes the limitation on the minimal modulation depth in absorber. An automudulational stability and self-starting ability were analyzed, too.

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Section: Modelmentioning

confidence: 99%

Section: Now Let Consider the Eq (4) Without Klm Spm And Gvd (σ =mentioning

confidence: 99%

Section: Now Let Consider the Eq (4) Without Klm Spm And Gvd (σ =mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Theory of sub-10-fs generation in Kerr-lens mode-locked solid state lasers with a coherent semiconductor absorber

Калашников

Poloyko

2001

Laser Optics 2000: Ultrafast Optics and Superstrong Laser Fields

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Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

Jirauschek

Riesch

Tzenov

2019

Advcd Theory and Sims

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Due to their intuitiveness, flexibility, and relative numerical efficiency, the macroscopic Maxwell-Bloch (MB) equations are a widely used semiclassical and semi-phenomenological model to describe optical propagation and coherent light-matter interaction in media consisting of discrete-level quantum systems. This review focuses on the application of this model to advanced optoelectronic devices, such as quantum cascade and quantum dot lasers. The Bloch equations are here treated as a density matrix model for driven quantum systems with two or multiple discrete energy levels, where dissipation is included by Lindblad terms. Furthermore, the 1D MB equations for semiconductor waveguide structures and optical fibers are rigorously derived. Special analytical solutions and suitable numerical methods are presented. Due to the importance of the MB equations in computational electrodynamics, an emphasis is placed on the comparison of different numerical schemes, both with and without the rotating wave approximation. The implementation of additional effects which can become relevant in semiconductor structures, such as spatial hole burning, inhomogeneous broadening, and local-field corrections, is discussed. Finally, links to microscopic models and suitable extensions of the Lindblad formalism are briefly addressed. of a lower bandgap material than the adjacent layers, which restricts the free electron motion in that layer to the in-plane directions and gives rise to quantized energy states in growth direction. As a consequence of the further restriction of the energy spectrum and the even stronger carrier localization, additional improvement can be expected from 2D or 3D confinement, resulting in quantum wire/dash and quantum dot (QD) structures, respectively. Indeed, QD [1][2][3] and quantum dash [4] lasers and laser amplifiers have been shown to exhibit excellent characteristics. In Figure 1, the formation of quantized states in quantum wells, wires, and dots is schematically illustrated. The term quantum dash refers to an elongated nanostructure, that is, some kind of short quantum wire. By contrast, the term nanowire does not necessarily indicate strong quantum confinement. For example, in nanowire lasers, the nanowire geometry typically serves as a single-mode optical waveguide resonator, while the active region is based on a heterostructure or quantum well, as in a conventional laser diode. [5,6] Semiconductor optoelectronic devices usually rely on electron-hole recombination, that is, optical transitions between conduction and valence band states. The associated resonance wavelength is largely determined by the semiconductor bandgap, which establishes a lower bound on the transition energy. Thus, the coverage of a certain spectral region depends on the existence of suitable semiconductor materials, which for example restricts the availability of practical optoelectronic sources and detectors in the mid-infrared and terahertz regions. An alternative concept is based on intersubband devices, which employ so-called i...

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Nonlinear Phenomena with Ultra-Broadband Optical Radiation in Photonic Crystal Fibers and Hollow Waveguides

2002

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Theory of solid-state laser mode locking by coherent semiconductor quantum-well absorbers

Cited by 26 publications

References 51 publications

Theory of sub-10-fs generation in Kerr-lens mode-locked solid state lasers with a coherent semiconductor absorber

Theory of sub-10-fs generation in Kerr-lens mode-locked solid state lasers with a coherent semiconductor absorber

Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

Nonlinear Phenomena with Ultra-Broadband Optical Radiation in Photonic Crystal Fibers and Hollow Waveguides

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