Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells

Fallica, Roberto; Battaglia, Jean-Luc; Cocco, S.; Monguzzi, Cristiano; Teren, Andrew R.; Wiemer, C.; Varesi, E.; Cecchini, Raimondo; Gotti, A; Fanciulli, M.

doi:10.1021/je800770s

Cited by 47 publications

(35 citation statements)

References 17 publications

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“…The acoustic properties of the crystalline phases are very similar, and the difference in the thermal conductivity is attributed to the electron contribution, which is also in good agreement with predictions using the Wiedemann-Franz law and separate measurements of electrical properties [116,128]. Heat conduction across interfaces with surrounding passivation and electrode materials (SiO 2 [121,123], ZnS:SiO2 [114], TiN [125,128,130], Al [129]) is governed by acoustic properties and interfacial disorder [125,130].…”

Section: Phase Change Memoriessupporting

confidence: 75%

“…The PCM research community has leveraged and extended the TDTR and 3ω methodologies to reveal a variety of the fascinating thermal transport phenomena that occur in the phase-change chalcogenides [114][115][116][117][118][119][120][121][122][123][124][125][126][127][128][129][130]. The TDTR methodology has proven useful for extracting coupled (and even decoupling [125]) film and interface properties.…”

Section: Phase Change Memoriesmentioning

confidence: 99%

“…(b) Schematic illustration of the programming pulses, which require extreme temperature transients, which involve complex electrothermal phenomena. (c) Room-temperature thermal conductivity data for Ge 2 Sb 2 Te 5 films [114][115][116][117][118][119][120][121][122][123][124][125][126][127][128][129][130]. The circles are obtained from the 3ω measurements [114, 115, 119-121, 126, 127] and the diamonds are obtained from the TDTR measurements [116-118, 122-125, 128-130].…”

Section: Phase Change Memoriesmentioning

confidence: 99%

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Evaluating Broader Impacts of Nanoscale Thermal Transport Research

Shi

Dames

Lukes

et al. 2015

Nanoscale and Microscale Thermophysical Engineering

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The past two decades have witnessed the emergence and rapid growth of the research field of nanoscale thermal transport. Much of the work in this field has been fundamental studies that have explored the mechanisms of heat transport in nanoscale films, wires, particles, interfaces, and channels. However, in recent years there has been an increasing emphasis on utilizing the fundamental knowledge gained toward understanding and improving Manuscript 128 L. SHI ET AL.device and system performances. In this opinion article, an attempt is made to provide an evaluation of the existing and potential impacts of the basic research efforts in this field on the developments of the heat transfer discipline, workforce, and a number of technologies, including heat-assisted magnetic recording, phase change memories, thermal management of microelectronics, thermoelectric energy conversion, thermal energy storage, building and vehicle heating and cooling, manufacturing, and biomedical devices. The goal is to identify successful examples, significant challenges, and potential opportunities where thermal science research in nanoscale has been or will be a game changer.

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Section: Phase Change Memoriessupporting

confidence: 75%

Section: Phase Change Memoriesmentioning

confidence: 99%

Section: Phase Change Memoriesmentioning

confidence: 99%

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Evaluating Broader Impacts of Nanoscale Thermal Transport Research

Shi

Dames

Lukes

et al. 2015

Nanoscale and Microscale Thermophysical Engineering

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“…Moreover, thermal cross-talks among the different bits is a crucial reliability issue in PCM. Although experimental data on thermal conductivity are available for few materials in this class, [6][7][8] it is unclear whether the value measured in the bulk phase could also describe the behavior of the material in nanoscaled devices (10-20 nm) which might be smaller than the phonon mean free path. This is particularly relevant for PCM architectures based on nanostructures employing nanowires, 9 colloidal nanoparticles, 10 thin bridges, 11 and nanotubes.…”

Section: Introductionmentioning

confidence: 99%

Thermal transport in phase-change materials from atomistic simulations

et al. 2012

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We computed the thermal conductivity (κ) of amorphous GeTe by means of classical molecular dynamics and lattice dynamics simulations. GeTe is a phase change material of interest for applications in nonvolatile memories. An interatomic potential with close-to-ab initio accuracy was used as generated by fitting a huge ab initio database with a neural network method. It turns out that the majority of heat carriers are nonpropagating vibrations (diffusons), the small percentage of propagating modes giving a negligible contribution to the total value of κ. This result is in contrast with the properties of other amorphous semiconductors such as Si for which nonpropagating and propagating vibrations account for about one half of the value of κ each. This outcome suggests that the value of κ measured for the bulk amorphous phase can be used to model the thermal transport of GeTe and possibly of other materials in the same class also in nanoscaled memory devices. Actually, the contribution from propagating modes, which may endure ballistic transport at the scale of 10-20 nm, is negligible.

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“…8 The electrical resistivity varies over several decades, according to the phase: in the amorphous state GST is an insulator ͑up to 1 ⍀ m͒, whereas in the crystalline state, it becomes conductive ͑10 −4 -10 −3 ⍀ m for the fcc crystalline and about 10 −5 ⍀ m for the hcp crystalline͒. 9 Previous work 10 has shown that the thermal conductivity of GST does not exhibit such a large variation during the phase change transformation. Nevertheless, even if the variation remains small, the thermal conductivity is a sensitive parameter when simulating the heat transfer in a memory device based on such a phase change material.…”

Section: Introductionmentioning

confidence: 99%

Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C

Battaglia

Kusiak

Schick

et al. 2010

Journal of Applied Physics

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is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. The thermal conductivity of Ge 2 Sb 2 Te 5 ͑GST͒ layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO 2 , was measured using a photothermal radiometry experiment. The two phase changes in the Ge 2 Sb 2 Te 5 were retrieved, starting from the amorphous and sweeping to the face centered cubic ͑fcc͒ crystalline state at 130°C and then to the hexagonal crystalline phase ͑hcp͒ at 310°C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO 2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.

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Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells

Cited by 47 publications

References 17 publications

Evaluating Broader Impacts of Nanoscale Thermal Transport Research

Evaluating Broader Impacts of Nanoscale Thermal Transport Research

Thermal transport in phase-change materials from atomistic simulations

Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C

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