Thermal Conductivity Measurements of Sb–Te Alloy Thin Films Using a Nanosecond Thermoreflectance Measurement System

Kuwahara, Masashi; Сузукі, Осаму; Taketoshi, Naoyuki; Yagi, Takashi; Fons, Paul; Tominaga, Junji; Baba, Toshihide

doi:10.1143/jjap.46.6863

Cited by 21 publications

(9 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[47] The measured values of the 39R-M 0.067 Sb 0.667 Te 0.266 phases are in this range, and are similar to the value measured for Sb 2 Te (8 WK À1 m…”

supporting

confidence: 82%

Elemental Distribution and Thermoelectric Properties of Layered Tellurides 39R‐M_0.067Sb_0.667Te_0.266 (M=Ge, Sn)

Schneider

Fahrnbauer

Rosenthal

et al. 2011

Chemistry A European J

View full text Add to dashboard Cite

The isostructural phases 39R‐Ge0.067Sb0.667Te0.266 (R$\bar 3$m, a=4.2649(1), c=75.061(2) Å) and 39R‐Sn0.067Sb0.667Te0.266 (R$\bar 3$m, a=4.2959(1), c=75.392(2) Å) were prepared by quenching stoichiometric melts of the pure elements and subsequent annealing at moderate temperatures. Their structures are comparable to “superlattices” synthesized by layer‐by‐layer deposition onto a substrate. These structures show no stacking disorder by electron microscopy. The structure of the metastable layered phases are similar to that of 39R‐Sb10Te3 (equivalent to Sb0.769Te0.231), which contains four A7 gray‐arsenic‐type layers of antimony alternating with Sb2Te3 slabs. Joint refinements on single‐crystal diffraction data using synchrotron radiation at several K edges were performed to enhance the scattering contrast. These refinements show that the elemental distributions at some atom positions are disordered whereas otherwise the structures are long‐range ordered. The variation of the elemental concentration correlates with the variation in interatomic distance. Z‐contrast scanning transmission electron microscopy (HAADF‐STEM) on 39R‐Ge0.067Sb0.667Te0.266 confirms the presence of concentration gradients. The carrier‐type of the isostructural metal (A7‐type lamellae)‐semiconductor heterostructures (Ge/Sn‐doped Sb2Te3 slabs) varies from n‐type (Ge0.067Sb0.667Te0.266) to p‐type (Sn0.067Sb0.667Te0.266). Although the absolute values of the Seebeck coefficient reached about 50–70 μV/K and the electrical conductivity is relatively high, the two isotypic phases exhibit a maximal thermoelectric figure of merit (ZT) of 0.06 at 400 °C as their thermal conductivity (κ≈8–9.5 W/mK at 400 °C) lies interestingly in between that of antimony and pure Sb2Te3.

show abstract

“…[47] The measured values of the 39R-M 0.067 Sb 0.667 Te 0.266 phases are in this range, and are similar to the value measured for Sb 2 Te (8 WK À1 m…”

supporting

confidence: 82%

Elemental Distribution and Thermoelectric Properties of Layered Tellurides 39R‐M_0.067Sb_0.667Te_0.266 (M=Ge, Sn)

Schneider

Fahrnbauer

Rosenthal

et al. 2011

Chemistry A European J

View full text Add to dashboard Cite

show abstract

“…Measurements of the thermal properties of phase‐change materials have also been performed using the 3 ω ‐method, yielding information on the behavior of the material itself but also at interfaces 78. Further measurements are reported by Giraud et al79, Kuwahara et al80, 81 and Risk et al82…”

Section: Materials Propertiesmentioning

confidence: 99%

Design Rules for Phase‐Change Materials in Data Storage Applications

2011

View full text Add to dashboard Cite

Phase-change materials can rapidly and reversibly be switched between an amorphous and a crystalline phase. Since both phases are characterized by very different optical and electrical properties, these materials can be employed for rewritable optical and electrical data storage. Hence, there are considerable efforts to identify suitable materials, and to optimize them with respect to specific applications. Design rules that can explain why the materials identified so far enable phase-change based devices would hence be very beneficial. This article describes materials that have been successfully employed and dicusses common features regarding both typical structures and bonding mechanisms. It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates. The occurence of resonance is linked to the composition, thus providing a design rule for phase-change materials. This understanding helps to unravel characteristic properties such as electrical and thermal conductivity which are discussed in the subsequent section. Then, turning to the transition kinetics between the phases, the current understanding and modeling of the processes of amorphization and crystallization are discussed. Finally, present approaches for improved high-capacity optical discs and fast non-volatile electrical memories, that hold the potential to succeed present-day's Flash memory, are presented.

show abstract

“…Masashi et al . measured the thermal conductivities of crystalline Sb 2 Te, Sb 2 Te 3 , SbTe 9 , Sb, and Te thin films at room temperature 42 . Wang et al .…”

Section: Introductionmentioning

confidence: 99%

Temperature dependent thermal conductivity and transition mechanism in amorphous and crystalline Sb2Te3 thin films

Wei

Sun

et al. 2017

Sci Rep

View full text Add to dashboard Cite

Sb2Te3 thin films are widely used in high density optical and electronic storage, high-resolution greyscale image recording, and laser thermal lithography. Thermal conductivity and its temperature dependence are critical factors that affect the application performance of thin films. This work aims to evaluate the temperature dependence of thermal conductivity of crystalline and amorphous Sb2Te3 thin films experimentally and theoretically, and explores into the corresponding mechanism of heat transport. For crystalline Sb2Te3 thin films, the thermal conductivity was found to be 0.35 ± 0.035 W m−1 K−1 and showed weak temperature dependence. The thermal conductivity of amorphous Sb2Te3 thin films at temperatures below ~450 K is about 0.23 ± 0.023 W m−1K−1, mainly arising from the lattice as the electronic contribution is negligible; at temperatures above 450 K, the thermal conductivity experiences an abrupt increase owing to the structural change from amorphous to crystalline state. The work can provide an important guide and reference to the real applications of Sb2Te3 thin films.

show abstract

Thermal Conductivity Measurements of Sb–Te Alloy Thin Films Using a Nanosecond Thermoreflectance Measurement System

Cited by 21 publications

References 20 publications

Elemental Distribution and Thermoelectric Properties of Layered Tellurides 39R‐M_0.067Sb_0.667Te_0.266 (M=Ge, Sn)

Elemental Distribution and Thermoelectric Properties of Layered Tellurides 39R‐M_0.067Sb_0.667Te_0.266 (M=Ge, Sn)

Design Rules for Phase‐Change Materials in Data Storage Applications

Temperature dependent thermal conductivity and transition mechanism in amorphous and crystalline Sb2Te3 thin films

Contact Info

Product

Resources

About

Thermal Conductivity Measurements of Sb–Te Alloy Thin Films Using a Nanosecond Thermoreflectance Measurement System

Cited by 21 publications

References 20 publications

Elemental Distribution and Thermoelectric Properties of Layered Tellurides 39R‐M0.067Sb0.667Te0.266 (M=Ge, Sn)

Elemental Distribution and Thermoelectric Properties of Layered Tellurides 39R‐M0.067Sb0.667Te0.266 (M=Ge, Sn)

Design Rules for Phase‐Change Materials in Data Storage Applications

Temperature dependent thermal conductivity and transition mechanism in amorphous and crystalline Sb2Te3 thin films

Contact Info

Product

Resources

About

Elemental Distribution and Thermoelectric Properties of Layered Tellurides 39R‐M_0.067Sb_0.667Te_0.266 (M=Ge, Sn)

Elemental Distribution and Thermoelectric Properties of Layered Tellurides 39R‐M_0.067Sb_0.667Te_0.266 (M=Ge, Sn)