2020
DOI: 10.1016/j.jnucmat.2020.152258
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Thermal conductivity variation in uranium dioxide with gadolinia additions

Abstract: By combining experimental observations on Gd doped fuel with a theoretical understanding, the variation in thermal conductivity with Gd concentration and accommodation mechanism has been modelled. Four types of Gd accommodation mechanisms have been studied. In UO 2−x , isolated substitutional Gd 3+ ions are compensated by oxygen vacancies and {2Gd U : V •• O } × defect clusters. In UO 2 , isolated substitutional Gd 3+ ions are compensated by U 5+ ions and {Gd U : U • U } × defect clusters. The results indicate… Show more

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Cited by 12 publications
(7 citation statements)
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“…An additional complexity for ionic materials is the fact that scattering due to charge compensating defects must also be considered. For example, Figure 31 shows the significant impact that a particular charge compensating mechanism has on the thermal conductivity of UO2 doped with 5 wt% Gd [635]. If Gd impurities are compensated by U 5+ substituted at a U 4+ site the thermal conductivity is significantly higher than if oxygen vacancies (VO) are used.…”
Section: Point Defect Scattering Using Molecular Dynamicsmentioning
confidence: 99%
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“…An additional complexity for ionic materials is the fact that scattering due to charge compensating defects must also be considered. For example, Figure 31 shows the significant impact that a particular charge compensating mechanism has on the thermal conductivity of UO2 doped with 5 wt% Gd [635]. If Gd impurities are compensated by U 5+ substituted at a U 4+ site the thermal conductivity is significantly higher than if oxygen vacancies (VO) are used.…”
Section: Point Defect Scattering Using Molecular Dynamicsmentioning
confidence: 99%
“…For example, Figure 31 shows the significant impact of a particular chargecompensating mechanism on the thermal conductivity of UO 2 doped with 5 wt % Gd. 635 If U 5+ substituted at U 4+ sites is used to compensate for Gd impurities, the thermal conductivity is significantly higher than if oxygen vacancies (V O ) are used, despite the lower concentration of V O needed to chargecompensate 5 wt % Gd. By reducing the number of phonon scattering centers, binding increases the thermal conductivity with respect to a random distribution of defects.…”
Section: Molecular Dynamics Simulations Of Thermal Conductivitymentioning
confidence: 99%
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