Thermal Effect Analysis of Metal Film Ablation by Ultra-Short Laser Pulses

Defei, 王德飞 Wang; Jiping, 于继平 Yu; Chunfeng, 郭春凤 Guo; Wenzong, 齐文宗 Qi

doi:10.3788/cjl20083510.1579

Cited by 3 publications

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“…In any cases, a high local temperature is created in and around the particles during membrane permeabilization [12,13] . Estimates of the temperatures [14] for our experimental conditions give a temperature increase by 900 K when 15-nm particles are irradiated with a 10-mJ laser, while the 30-nm particles are heated by 3600 K. These temperatures are high enough to evaporate water in a layer around the particles, which creates a rapid expanding bubble.…”

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confidence: 99%

纳米金辅助的激光转染方法研究

Yao

Zhang

2009

中国光学快报

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The irradiation of cells combined with the immunoconjugate of gold nanoparticles by the short pulse laser can make the plasma membrane be transiently permeabilized, which can be used to transfer exogenous molecules into the cells. We explore this technique as a novel gene transfection method for floating cells. Three different floating cells exposed to the laser are selectively transfected with fluorescein isothiocyanatedextran, antibody, and green fluorescent protein (GFP) coding plasmids, and the viability of cells are determined by propidium iodide. For fluorescein isothiocyanate-dextran, the best transfection efficiency of 65% is obtained; for the antibody, it is 74%; whereas for the green fluorescent protein coding plasmids, a very small transfection efficiency is gained. If the transfection efficiency is improved, gold nanoparticles will be very useful as mediator for gene transfection in living cells.

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mentioning

confidence: 99%

纳米金辅助的激光转染方法研究

Yao

Zhang

2009

中国光学快报

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Study of non-equilibrium thermal transport in Ge2Sb2Te5 thin films under ultrafast laser excitation using a photo-excited carrier integrated semiconductor model

Wang

Liu

et al. 2017

Journal of Applied Physics

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A two-temperature semiconductor model was used to investigate the non-equilibrium thermal transport in Ge2Sb2Te5 thin films caused by an ultrashort laser pulse ranging from atto- to nanoseconds. In the model, photo-excited carriers were considered based on the semiconductor absorbing mechanism. As a general rule, shorter laser pulses led to shorter equilibration time between carrier and lattice systems. However, a minimum time to reach the thermal equilibrium (about 80 ps) was obtained for both the attosecond and femtosecond laser pulses, which was mainly determined by material properties instead of the pulse width. The carrier density had a strong influence on the temperatures of both the carrier and lattice systems, and photo-excited carriers played an important role in the first 40 ps under the attosecond and femtosecond laser irradiations. Besides, the ambipolar diffusion effect significantly reduced the density of free carriers and then extended the crystallization and amorphization times of Ge2Sb2Te5.

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A photo-excited carrier integrated semiconductor model to predict the non-equilibrium thermal transport in Ge2Sb2Te5 thin films under the ultrafast pulsed laser

Wang¹,

Liu²

2017

International Congress on Applications of Lasers &Amp; Electro-Optics

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Thermal Effect Analysis of Metal Film Ablation by Ultra-Short Laser Pulses

Cited by 3 publications

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纳米金辅助的激光转染方法研究

纳米金辅助的激光转染方法研究

Study of non-equilibrium thermal transport in Ge2Sb2Te5 thin films under ultrafast laser excitation using a photo-excited carrier integrated semiconductor model

A photo-excited carrier integrated semiconductor model to predict the non-equilibrium thermal transport in Ge2Sb2Te5 thin films under the ultrafast pulsed laser

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