Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation

Kazantsev, D M; Akhundov, I. O.; Rudaya, N.S.; Кожухов, А. С.; Alperovich, V. L.; Латышев, А. В.

doi:10.1016/j.apsusc.2020.147090

Cited by 4 publications

(5 citation statements)

References 44 publications

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“…Sublimation is the process by which a solid material turns to gas without passing through the liquid phase. In crystals, sublimation causes them to create step-like structures, [20] as has been shown with GaN(0001) [21], GaAs(001) [22,23], and Si(111) [24,25]. For each of these materials, both Monte Carlo simulation and experimental results showed agreement on the appearance of step-like structures and in the case of Si(111), it was possible to nano-texture the surface with the sublimation method.…”

Section: Introduction: High Intensity > Tw/cm 2 Crystal Processingmentioning

confidence: 70%

Crystalline Flat Surface Recovered by High-Temperature Annealing after Laser Ablation

Smith

Tang

et al. 2023

Photonics

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Ultra-short laser pulses (1030 nm/230 fs) were used to laser ablate the surface of crystalline sapphire (Al2O3) at high intensity per pulse 20–200 TW/cm2/pulse. Laser-ablated patterns were annealed at a high temperature of 1500 °C. Surface reconstruction took place, removing the ablation debris field at the edges of ablated pits in oxygen flow (O2 flow). Partial reconstruction of ripples was also observed when multi-pulse ablated surfaces were annealed at high temperature in O2 flow. Back-side ablation of a 0.5-mm-thick Al2O3 produced high surface roughness ∼1μm which was reduced to ∼0.2μm by high-temperature annealing at 1500 °C for 2 h in O2. Improvement of surface quality was due to restructuring of the crystalline surface and sublimation, while the defined 3D shape of a micro-lens was not altered after HTA (no thermal morphing).

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Section: Introduction: High Intensity > Tw/cm 2 Crystal Processingmentioning

confidence: 70%

Crystalline Flat Surface Recovered by High-Temperature Annealing after Laser Ablation

Smith

Tang

et al. 2023

Photonics

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“…The presence of pyramid hills on the surface is associated with the emergence of screw dislocations. − The source of such number of dislocations is still under discussion. It is suggested that the screw dislocation in Bi 2 Se 3 QL can appear as a result of interaction with the substrate atomic step .…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Stepina

Ishchenko

Golyashov

et al. 2022

Crystal Growth & Design

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Bi y Sb2–y Te3–x Se x (BSTS) topological insulator (TI) thin films were grown by physical vapor deposition (PVD) and molecular-beam epitaxy (MBE) and compared by growth parameters, substrate selection, preparation, and resulting film properties. For the MBE-grown BSTS on Si(111)-(7 × 7), preliminary deposition of the Bi2Te3 buffer layer at the Te-rich growth condition was found to improve the film structural properties. Using a BSTS crystal as the main source for deposition allows us to significantly decrease the molecular Te flux. For the PVD growth, optimal conditions (gas flux, source, and substrate temperatures) were found for a morphologically smooth BSTS film on mica. In order to grow the epitaxial BSTS film on a Si/SiO2 substrate, graphene was successfully used as the pre-epitaxial layer. A newly developed chemical preparation method of atomically clean and structurally ordered epi-layer surfaces allowed us to study the electronic structure of the grown TI films without using capping layers. The surface states with Dirac-like dispersion at the Γ-point in the surface Brillouin zone were detected by angle-resolved photoelectron spectroscopy. Photoemission measurements showed a change in the surface Fermi level position depending on the composition of BSTS films. The magnetoconductivity data demonstrated a strong dependence of the parameters describing a weak antilocalization on the substrate used.

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“…Kinetic Monte Carlo simulations were done in the model of one-component cubic lattice [24,31]. In this model, complex atomic rearrangements and mass transfer on a reconstructed GaAs(001) surface are replaced by random walks and attachment/detachment of atoms between sites of the cubic crystal lattice.…”

Section: Methodsmentioning

confidence: 99%

“…In principle, thermal fluctuations of the steps may occur by sublimation and readsorption of atoms [17,22,33], without surface diffusion. However, it was proved earlier that surface diffusion plays an important role in the processes of thermal smoothing and roughening of GaAs surfaces [24,25,31]. In this case, a possible microscopic mechanism of the entropic repulsion between closely spaced steps consists in atom exchange between the steps via attachment/detachment and surface diffusion across terraces.…”

Section: Simulationmentioning

confidence: 98%

“…In general, the regimes may be not purely diffusion-limited or attachment/detachment-limited and are established depending on the deviation from equilibrium and on the probabilities of various microscopic events, including hops of adatoms to adjacent free sites on a terrace, incorporation into a step or leaving a step, and desorption from the surface. However, for the sublimation-induced roughening at T ∼ 750 °C, when the adatom diffusion length λ ∼ 15 nm [31] is smaller than the terrace width, the diffusion-limited regime supposedly takes place. At lower temperatures T ∼ 600 °C-700 °C, in the conditions closer to equilibrium, the attachment/detachment-limited surface smoothing more likely occurs.…”

Section: Simulationmentioning

confidence: 99%

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Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

Kazantsev¹,

Akhundov²,

Кожухов³

et al. 2023

Phys. Scr.

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We present the results of GaAs annealing experiments in the conditions near equilibrium, which clarify the reasons of the transition from surface smoothing to roughening at temperatures above 650°C. The roughening is due to kinetic instabilities arising under deviation of annealing conditions towards growth or sublimation. These instabilities reveal themselves in appearing islands (for sublimation) and pits (for growth) of multilayer heights and depths, respectively. The islands and pits appear due to the motion of atomic steps through surface spots, at which sublimation and growth are suppressed. Pinning of the steps at these spots also lead to step bunching at surfaces with sufficiently small terrace widths. This explanation is consistent with Monte Carlo simulations of atomic processes on the GaAs surface. The similarity and distinctions in surface roughening under sublimation and growth, along with the role of Schwöbel barrier, are discussed. Annealing experiments in the cavities, which are formed by GaAs substrates with well-controlled atomic step densities enabled us to clarify the roughening mechanisms and to improve the efficiency of GaAs thermal smoothing technique by increasing smoothing temperature up to 775°C.

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Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation

Cited by 4 publications

References 44 publications

Crystalline Flat Surface Recovered by High-Temperature Annealing after Laser Ablation

Crystalline Flat Surface Recovered by High-Temperature Annealing after Laser Ablation

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

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Thermal roughening of GaAs surface by unwinding dislocation-induced spiral atomic steps during sublimation

Cited by 4 publications

References 44 publications

Crystalline Flat Surface Recovered by High-Temperature Annealing after Laser Ablation

Crystalline Flat Surface Recovered by High-Temperature Annealing after Laser Ablation

Epitaxial Growth of the BiySb2–yTe3–xSex 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Kinetically driven thermal roughening of semiconductor surfaces: experiment on GaAs and Monte Carlo simulation

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Product

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Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy