Thermally activated magnetization reversal in magnetic tunnel junctions

Zhou, Guanghong; Wang, Yingang; Qi, Xianjin; Li, Ziquan; Chen, Jiankang

doi:10.1088/1674-1056/18/2/063

Chinese Phys. B

2009

DOI: 10.1088/1674-1056/18/2/063

|View full text |Cite

Thermally activated magnetization reversal in magnetic tunnel junctions

Guanghong Zhou

Yingang Wang

Xianjin Qi

et al.

Abstract: Thermally activated magnetization reversal in magnetic tunnel junctions * Zhou Guang-Hong(周广宏) a)b) , Wang Yin-Gang(王寅岗) a) † , Qi Xian-Jin(祁先进) a) , Li Zi-Quan(李子全) a) , and Chen Jian-Kang(陈建康) a)

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2010

2012

Publication Types

Select...

Article3

Relationship

Self Cite1

Independent2

Authors

Journals

Cited by 3 publications

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

Wang

Zhou

et al. 2010

Chinese Phys. B

Self Cite

View full text Add to dashboard Cite

This paper reports that a CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on silicon wafer substrate; the thermal relaxation of the CoFe/IrMn bilayer is investigated by means of holding the film in a negative saturation field at various temperatures. The exchange bias decreases with increasing period of time while holding the film in a negative saturation field at a given temperature. Increasing the temperature accelerates the decrease of exchange field. The results can be explained by the quantitative model of the nucleation and growth of antiferromagnetic domains suggested by Xi H W et al. [2007 Phys. Rev. B 75 014434], and it is believed that two energy barriers exist in the investigated temperature range.

show abstract

Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

Wang

Zhou

et al. 2010

Chinese Phys. B

Self Cite

View full text Add to dashboard Cite

show abstract

Influence of Ga⁺ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

et al. 2011

View full text Add to dashboard Cite

show abstract

Structural, elastic, phonon and electronic properties of a MnPd alloy

Wang¹,

Chen²,

Jiang³

et al. 2012

Chinese Phys. B

View full text Add to dashboard Cite

The structural, elastic, phonon and electronic properties of a MnPd alloy have been investigated using the firstprinciples calculation. The calculated lattice constants and electronic structure agree well with the experimental results. The microscopic mechanism of the diffusionless martensitic transition from the paramagnetic B2 (PM-B2) phase to the antiferromagnetic L1 0 (AFM-L1 0) phase through the intermediate paramagnetic L1 0 (PM-L1 0) phase has been explored theoretically. The obtained negative shear modulus C ′ = (C 11 − C 12)/2 of the PM-B2 phase is closely related to the instability of the cubic B2 phase with respect to the tetragonal distortions. The calculated phonon dispersions for the PM-L1 0 and AFM-L1 0 phases indicate that they are dynamically stable. However, the AFM-L1 0 phase is energetically most favorable according to the calculated total energy order, so the PM-L1 0 →AFM-L1 0 transition is caused by the magnetism rather than the electron-phonon interaction. Additionally, the AFM-L1 0 state is stabilized through the formation of a pseudo gap located at the Fermi level. The calculated results show that the CuAu-I type structure in the collinear antiferromagnetic state is dynamically and mechanically stable, thus is the low temperature phase.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Thermally activated magnetization reversal in magnetic tunnel junctions

Abstract: Thermally activated magnetization reversal in magnetic tunnel junctions * Zhou Guang-Hong(周广宏) a)b) , Wang Yin-Gang(王寅岗) a) † , Qi Xian-Jin(祁先进) a) , Li Zi-Quan(李子全) a) , and Chen Jian-Kang(陈建康) a)

Cited by 3 publications

References 16 publications

Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

Influence of Ga⁺ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

Structural, elastic, phonon and electronic properties of a MnPd alloy

Contact Info

Product

Resources

About

Thermally activated magnetization reversal in magnetic tunnel junctions

Abstract: Thermally activated magnetization reversal in magnetic tunnel junctions * Zhou Guang-Hong(周广宏) a)b) , Wang Yin-Gang(王寅岗) a) † , Qi Xian-Jin(祁先进) a) , Li Zi-Quan(李子全) a) , and Chen Jian-Kang(陈建康) a)

Cited by 3 publications

References 16 publications

Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

Influence of Ga+ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

Structural, elastic, phonon and electronic properties of a MnPd alloy

Contact Info

Product

Resources

About

Influence of Ga⁺ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers