Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)

Lamagna, L.; Wiemer, C.; Baldovino, S.; Molle, Alessandro; Perego, Michele; Schamm-Chardon, Sylvie; Coulon, Pierre‐Eugène; Fanciulli, M.

doi:10.1063/1.3227669

Cited by 34 publications

(43 citation statements)

References 28 publications

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“…During ALD, the formation of La-O-Ge bondings occurs, as it has already been demonstrated in several works where La-based oxides were put directly in contact with Ge͑100͒. 26,28,51 Similarly to what it has been inferred for LaSiO, the formation of LaGeO is a spontaneous reaction and does not depend on the total film thickness. The Ge atoms diffusion from the substrate is likewise promoted by the thermal treatment performed at 400°C and consequently the chemical IL extension is increased.…”

Section: Si and Ge Diffusion: Formation Of Lasio And Lageo Speciessupporting

confidence: 56%

“…Therefore, ToF SIMS indicates the presence of a socalled "chemical" IL as already observed for La-doped ZrO 2 films deposited on Ge͑100͒. 51 No intense Ge related signals are detected at the surface of the La 2 O 3 film, suggesting a limited Ge diffusion during ALD growth. As expected, in the as-grown state the shape of the OH profile unveils the presence of a relevant hydroxide component in the film.…”

Section: -6supporting

confidence: 55%

“…Nevertheless, in order to address this specific issue a more detailed chemical investigation of the interface composition is needed 60 as extensively discussed in Ref. 51. The D it should be extracted at high frequency, and thus at more positive voltages, in order to be in the depletion regime.…”

Section: B Electrical Propertiesmentioning

confidence: 99%

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O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Lamagna

Wiemer

Perego

et al. 2010

Journal of Applied Physics

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The hexagonal phase of La2O3 is obtained upon vacuum annealing of hydroxilated La2O3 films grown with atomic layer deposition at 200 °C using La(PirCp)3 and O3. A dielectric constant value of 24±2 and 22±1 is obtained on Si-based and Ge-based metal-oxide-semiconductor capacitors, respectively. However, the relatively good La2O3 dielectric properties are associated with significant interface reactivity on both semiconductor substrates. This leads to the identification of a minimum critical thickness that limits the scaling down of the equivalent oxide thickness of the stack. These findings are explained by the spontaneous formation of lanthanum silicate and germanate species which takes place during the growth and also upon annealing. Although the ultimate film thickness scalability remains an unsolved concern, the use of an O3-based process is demonstrated to be a suitable solution to fabricate La2O3 films that can be successfully converted into the high-k hexagonal phase.

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Section: Si and Ge Diffusion: Formation Of Lasio And Lageo Speciessupporting

confidence: 56%

Section: -6supporting

confidence: 55%

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O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Lamagna

Wiemer

Perego

et al. 2010

Journal of Applied Physics

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“…As alternative to Si in highspeed logic devices, Ge is widely considered due to its higher carrier motilities [65]. High dielectric constant material is a promising strategy for ultra-scaled logic devices with coupling Ge channel.…”

Section: Germanium Substratementioning

confidence: 99%

“…Also, Gallium arsenide (GaAs) substrates for MOS transistors are being considered for their high electron channel mobility [53,77]. Meanwhile, Germanium has been introduced as channel material due to its high mobility for both electron and holes as compared to silicon [27,37,65,78]. It is found that for suitable future scaling, a dielectric with K over 40 is preferred.…”

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confidence: 99%

Advanced CMOS Gate Stack: Present Research Progress

Zhao

Werner

Taylor

et al. 2012

ISRN Nanotechnology

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The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor technology require the replacement of SiO 2 with gate dielectrics that have a high dielectric constant (high-k). When the SiO 2 gate thickness is reduced below 1.4 nm, electron tunneling effects and high leakage currents occur which present serious obstacles for device reliability. In recent years, various alternative gate dielectrics have been researched. Following the introduction of HfO 2 into the 45 nm process by Intel in 2007, the screening and selection of high-k gate stacks, understanding their properties, and their integration into CMOS technology have been a very active research area. This paper reviews the progress and efforts made in the recent years for high-k dielectrics, which can be potentially integrated into 22 nm (and beyond) technology nodes. Our work includes deposition techniques, physical characterization methods at the atomic scale, and device reliability as the focus. For most of the materials discussed here, structural and physical properties, dielectric relaxation issues, and projections towards future applications are also discussed.

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Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

Ghazy,

Zanders,

Devi

et al. 2024

Adv Materials Inter

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High‐quality rare earth element (R) based thin films are in demand for applications ranging from (opto)electronics and energy conversion/storage to medical diagnostics, imaging and security technologies. Atomic layer deposition (ALD) offers large‐area homogeneous and conformal ultrathin films and is uniquely suited to address the requirements set by the potential applications of R‐based thin films. The history starts from the 1990s, when the first electroluminescent R‐doped thin films were grown with ALD. The interest soon expanded to rare earth element oxide layers as high‐k gate dielectrics in semiconductor devices, and later to complex ternary and quaternary perovskite oxides with novel functional properties. The most recent advancements related to the combined atomic/molecular layer deposition (ALD/MLD) have rapidly expanded the family of R‐organic hybrid materials with intriguing luminescence and up‐conversion properties. This review provides up‐to‐date insights to the current state of ALD and ALD/MLD research of R‐based thin films and highlights their application potential.

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Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)

Cited by 34 publications

References 28 publications

O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Advanced CMOS Gate Stack: Present Research Progress

Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements

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