Thermodynamic evidence for surfactant behaviour of Sb in the growth of Ge on Si(001)

Jenkins, Stephen J.; Srivastava, G. P.

doi:10.1016/s0039-6028(98)80032-0

Cited by 17 publications

(6 citation statements)

References 21 publications

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“…From the total energy differences of the layer-by-layer growth models to which ab initio molecular dynamics is used or not, we can see that the error cannot be ignored (the energy differences per atom is about tens of meV). Jenkins and Srivastava, who have studied the Ge/Si systems, neglected this error, and got the result consistent with the experiment [16]. It is probably because the lattice misfit between Ge and Si is small which is about 4%, while the misfit between InAs and GaAs is about 7%.…”

Section: Analysis Of Inas/gaas Growth Modesupporting

confidence: 59%

“…The equilibrium state of the surface as a function of composition is determined by minimizing the surface free energy [15,16]. Surface free energy is defined as…”

Section: Analysis Of the Results About Dot Growth Modelmentioning

confidence: 99%

“…When l In þ l As > l bulk InAs , island formation will occur, since adatoms will tend to clump together to form regions of bulk InAs [16], otherwise layer-by-layer growth mode will energetically prefer. So we can use the relation between l In + l As and l bulk InAs as a criterion to determine the critical thickness of the growth mode transition.…”

Section: Analysis Of the Results About Dot Growth Modelmentioning

confidence: 99%

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Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study

Liu

Wang

2006

Surface Science

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Section: Analysis Of Inas/gaas Growth Modesupporting

confidence: 59%

“…The equilibrium state of the surface as a function of composition is determined by minimizing the surface free energy [15,16]. Surface free energy is defined as…”

Section: Analysis Of the Results About Dot Growth Modelmentioning

confidence: 99%

Section: Analysis Of the Results About Dot Growth Modelmentioning

confidence: 99%

See 1 more Smart Citation

Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study

Liu

Wang

2006

Surface Science

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“…Indeed, while some results reveal crystallinity damages induced by Sb mediated growth [2,8] others show a decrease of the defect density [9]. In addition, Sb has also been shown to increase the surface and interface roughness [2,6,8,10,12] instead of promoting Ge epitaxy on Si [4,9,12,15,17,23].…”

Section: Introductionmentioning

confidence: 99%

“…use of a group V surfactant element can solve several of these problems. Indeed, it was reported [4,5,9,11,12,15,17,22,23] that surfactant mediated growth could suppress or at least delay islands formation and permit…”

Section: Introductionmentioning

confidence: 99%

Sb-surfactant mediated growth of Ge nanostructures

Portavoce

Ronda

Berbézier

2002

Materials Science and Engineering: B

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This paper reports the AFM and HREM study of the Sb surfactant mediated growth of Ge on Si(0 0 1). We show that very dense self-organised Ge dots of small lateral dimensions can be grown by using a sub-monolayer coverage of Sb on Si(0 0 1) in the transient growth regime between 2D nucleation and step flow. The dramatic Ge growth change induced by Sb is attributed to both kinetic and thermodynamic effects. Indeed, HREM observations evidence mainly two phenomena: the close-packing of ultra-small Ge islands indicating a lower surface diffusion in presence of Sb and a mono-modal island shape and size that strongly differs from the bimodal islands 'huts' and 'domes' commonly observed without Sb. Morphological and microstructural features of Ge islands formed with and without Sb are studied and the differences between facets and aspect ratio are exhibited. Moreover, at lower growth temperature (in the 2D nucleation regime, T g 0 350°C), a delay to 3D island nucleation is observed and defect free 2D flat layers can be grown up to thicknesses of 18 A ,. At higher growth temperature, (in pure step flow at T g 750°C) large, well separated 'dome' islands partially relaxed by dislocation nucleation on their edges are obtained. Such islands are very similar to those obtained without Sb coverage. The complete desorption of Sb on Ge rich surface at T\ 720°C explains this result. This study which improves the understanding on the formation of ultra-small dense islands is very promising for the fabrication of quantum devices that require highly homogeneous islands of small lateral sizes and of MOSFET heterostructures with strained SiGe n-channel which require flat Ge rich layers with abrupt interfaces.

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First Principles Calculations of the Adsorption of Arsenic on Ge(001) and Its Surfactant Effect in the Epitaxial Growth of Si on Ge(001)

González-Méndez

Takeuchi

2000

phys. stat. sol. (b)

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We have studied the adsorption of As on the (001) surfaces of Ge using first principles total energy calculations. The initial substrate Ge dimers are broken and As forms symmetric dimers on an almost ideally bulk terminated Ge substrate. All the dangling bonds are saturated in this configuration, and the surface is very stable. Arsenic lowers the surface free energy of both Si and Ge surfaces and therefore, it is a good candidate to be used as surfactant in the growth of Si on Ge(001). Our ab initio calculations show that indeed the presence of a terminating As layer modifies the growth mode, promoting epitaxial growth of Si on Ge(001).

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Thermodynamic evidence for surfactant behaviour of Sb in the growth of Ge on Si(001)

Cited by 17 publications

References 21 publications

Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study

Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study

Sb-surfactant mediated growth of Ge nanostructures

First Principles Calculations of the Adsorption of Arsenic on Ge(001) and Its Surfactant Effect in the Epitaxial Growth of Si on Ge(001)

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