2015
DOI: 10.1016/j.comptc.2014.11.003
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Thermodynamic study on the chemical vapor deposition of silicon nitride from the SiCl4–NH3–H2 system

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Cited by 5 publications
(7 citation statements)
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“…Using the predicted enthalpies of formation at 298.15 K for all 438 gas-phase species (Table 2 and Refs. [12,13]), combined with the fitted heat capacities (Supplement 3 and Refs. [12,13]) and the data of the Si, C, N, H, and Cl atoms, the condensed phases ␣-SiC, ␤-SiC, Si 3 N 4 , C and Si from Ref.…”
Section: Gas-phase Equilibrium Diagramsmentioning
confidence: 99%
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“…Using the predicted enthalpies of formation at 298.15 K for all 438 gas-phase species (Table 2 and Refs. [12,13]), combined with the fitted heat capacities (Supplement 3 and Refs. [12,13]) and the data of the Si, C, N, H, and Cl atoms, the condensed phases ␣-SiC, ␤-SiC, Si 3 N 4 , C and Si from Ref.…”
Section: Gas-phase Equilibrium Diagramsmentioning
confidence: 99%
“…[12,13]), combined with the fitted heat capacities (Supplement 3 and Refs. [12,13]) and the data of the Si, C, N, H, and Cl atoms, the condensed phases ␣-SiC, ␤-SiC, Si 3 N 4 , C and Si from Ref. [27], the equilibrium concentration distribution for all species could be calculated according to Eq.…”
Section: Gas-phase Equilibrium Diagramsmentioning
confidence: 99%
See 1 more Smart Citation
“…At present, the preparation methods of silicon nitride powder mainly include the direct nitridation method, 10−12 the carbothermal reduction method, 13−17 the self-propagating high-temperature synthesis method, 18 the chemical vapor deposition method, 19,20 the sol−gel method, 21,22 and the silicon-imide thermal decomposition method. 23 Wang et al 24 prepared Si 3 N 4 powder with higher purity by preheatingassisted combustion at low N 2 pressures. Ye et al 25 prepared the yttrium aluminum garnet (Y 3 Al 5 O 12 ) precursor-coated Si 3 N 4 powder using the urea homogeneous preparation technique, in which urea was used as a precipitant.…”
Section: Introductionmentioning
confidence: 99%
“…However, chemical vapor deposition and the sol-gel processes are complex, expensive, and unfriendly to the environment, and carbothermal reduction tends to introduce carbon powder into the nal product. In contrast, direct nitridation at high temperatures with high-purity Si and N 2 to synthesize Si 3 N 4 provides a method with low costs and high e ciency [9,10]. In addition, through direct nitridation, the β phase was easily controlled by converting of α-phase at high temperatures [11].…”
Section: Introductionmentioning
confidence: 99%