Thermoelectric properties in Mn-doped Bi2Se3

Kim, C. M.; Kim, S. H.; Onimaru, Takahiro; Suekuni, Koichiro; Takabatake, Toshiro; Jung, Myung‐Hwa

doi:10.1016/j.cap.2014.05.011

Cited by 9 publications

(4 citation statements)

References 11 publications

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“…Pure Mg3Sb2 is an intrinsic p-type narrow gap semiconductor with a low carrier concentration. 16,17 Accordingly, the poor electrical transport performance of Mg3Sb2 limits the overall thermoelectric efficiency, even though it shows reasonably low lattice thermal conductivity. Many efforts, such as orbital engineering 8 and tuning carrier density with a variety of dopants, [18][19][20][21][22] have been devoted to the optimization of p-type performance.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Low-Cost n-Type Se-Doped Mg₃Sb₂-Based Zintl Compounds for Thermoelectric Application

et al. 2017

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Thermoelectric materials, capable of converting heat directly into electricity without moving parts, provide a promising renewable solid-state solution for waste heat harvesting. However, currently available commercial thermoelectric materials PbTe and Bi2Te3 are based on tellurium, an extremely scarce and expensive element, which prohibits large scale applications. Herein, we present a systematic study on a new low-cost Te-free material, n-type Se-doped Mg3Sb1.5Bi0.5, by combining the structure and property characterization with electronic structure and electrical transport modelling. Compared with pure Mg3Sb2, Se-doped Mg3Sb1.5Bi0.5 shows considerably enhanced power factor as well as much lower thermal conductivity. The excellent electrical transport originates from a nontrivial near-edge conduction band with six conducting carrier pockets and a light conductivity effective mass as well as the weak contribution from a secondary conduction band with a valley degeneracy of 2. The accurate location of the conduction band minimum is revealed from the Fermi surface, which appears to be crucial for the understanding of the electronic transport properties. In addition, the total thermal conductivity is found to be reasonably low (~0.62 W m-1 K-1 at 725 2 K). As a result, an optimal zT of 1.23 at 725 K is obtained in Mg3.07Sb1.5Bi0.48Se0.02. The high zT, as well as the earth-abundant constituent elements, makes the low-cost Se-doped Mg3Sb1.5Bi0.5 a promising candidate for the intermediate-temperature thermoelectric application. Moreover, the systematic electronic structure and transport modelling provide an insightful guidance for the further optimization of this material and other related Zintl compounds.

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Section: Introductionmentioning

confidence: 99%

High-Performance Low-Cost n-Type Se-Doped Mg₃Sb₂-Based Zintl Compounds for Thermoelectric Application

et al. 2017

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“…For a human body TEG, the maximum temperature gradient is found to be less than 2°C with a fill factor of 10%. 214 The output power increases by increasing the aspect ratio, modifying the leg shape, and lowering the fill factor across the module. 210,211 If a module has a fill factor in the range of 0.3% to 3%, it generates more power per unit area compared to instruments with a fill factor of more than 25%, whereas a module having a fill factor of less than 20% could compromise the integrity of mechanics.…”

Section: Thermoelectric Wearable Devicesmentioning

confidence: 99%

A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

Hegde

Prabhu

2022

J. Electron. Mater.

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One of the global demands of primary research objectives is to achieve human energy harvesting and self-powered wearable technologies. Bismuth chalcogenides are the trending materials for thermoelectric generators and Peltier coolers due to their notable thermoelectric figure of merit in the low- and room-temperature range. Systematic alloying of bismuth chalcogenides leads to a substantial change in their electrical and thermal transport properties. The high thermoelectric figure of merit (ZT) observed in bismuth chalcogenides is due to the rhombohedral crystal structure, lower effective mass, low thermal conductivity, and large band degeneracy. This review is aimed at identifying and quantifying different techniques for effectively improving the thermoelectric properties of doped/composite bismuth chalcogenide compounds. The review also examines the various synthesis methods including ball milling (BM), spark plasma sintering (SPS), self-propagating high-temperature synthesis (SHS), soft chemical reaction, hydrothermal reaction, melt growth (MG), melt spinning (MS), sintering and consolidated synthesis, and hot extrusion, with their respective figures of merit. Since device modification is a challenging task, this report reviews the present research on bismuth chalcogenide alloys to benchmark future development using various techniques. Graphical Abstract

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“…In recent years, researchers focusing on fabricating a p-type Bi 2 Se 3 , have also succeeded in several attempts with different strategies. Quaternary based p-type Bi x Sb y Pb z Se 3 , 12 Ca-doped Bi 2 Se 3 , 13 and Mn-doped Bi 2 Se 3 14 are the noteworthy results. Very recently, Jiang et al achieved a high power factor of 230 μW/mK 2 at RT and 420 μW/mK 2 at 350 °C in Bi 0.8 Sb 0.8 In 0.4 Se 3 15 for mid-temperature applications.…”

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confidence: 94%

Ultra-high power factor of p-type Bi₂Se₃ for room-temperature thermoelectric applications

et al. 2023

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Thermoelectric properties in Mn-doped Bi2Se3

Cited by 9 publications

References 11 publications

High-Performance Low-Cost n-Type Se-Doped Mg₃Sb₂-Based Zintl Compounds for Thermoelectric Application

High-Performance Low-Cost n-Type Se-Doped Mg₃Sb₂-Based Zintl Compounds for Thermoelectric Application

A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

Ultra-high power factor of p-type Bi₂Se₃ for room-temperature thermoelectric applications

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Thermoelectric properties in Mn-doped Bi2Se3

Cited by 9 publications

References 11 publications

High-Performance Low-Cost n-Type Se-Doped Mg3Sb2-Based Zintl Compounds for Thermoelectric Application

High-Performance Low-Cost n-Type Se-Doped Mg3Sb2-Based Zintl Compounds for Thermoelectric Application

A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

Ultra-high power factor of p-type Bi2Se3 for room-temperature thermoelectric applications

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Product

Resources

About

High-Performance Low-Cost n-Type Se-Doped Mg₃Sb₂-Based Zintl Compounds for Thermoelectric Application

High-Performance Low-Cost n-Type Se-Doped Mg₃Sb₂-Based Zintl Compounds for Thermoelectric Application

Ultra-high power factor of p-type Bi₂Se₃ for room-temperature thermoelectric applications