2003
DOI: 10.1088/0953-8984/15/4/304
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Thermoelectrical properties of the compounds ScMVIIISb and YMVIIISb (MVIII  Ni, Pd, Pt)

Abstract: The research into new materials with good thermoelectric properties has revealed new compounds consisting of metallic elements (Bando Y,

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Cited by 52 publications
(32 citation statements)
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“…In comparison with HgTe, most half‐Heusler TIs have stable chemical properties, and films of these compounds can be easily prepared by sputtering, a commonly used technique for device fabrication. The half‐Heusler YPtSb is close to the border between the trivial semiconductors and topological insulators, and it has a narrow gap of around 0.16 eV 15. Every 0.01 Å increase in the lattice constant along the c ‐axis has been calculated to result in about a 20 meV energy difference between the inverted bands.…”
Section: Introductionsupporting
confidence: 85%
“…In comparison with HgTe, most half‐Heusler TIs have stable chemical properties, and films of these compounds can be easily prepared by sputtering, a commonly used technique for device fabrication. The half‐Heusler YPtSb is close to the border between the trivial semiconductors and topological insulators, and it has a narrow gap of around 0.16 eV 15. Every 0.01 Å increase in the lattice constant along the c ‐axis has been calculated to result in about a 20 meV energy difference between the inverted bands.…”
Section: Introductionsupporting
confidence: 85%
“…This follows from the kinetic expression for thermal conductivity, κ = NCvl, where N is the number of thermal carriers, C the specific heat, v the group velocity (usually assumed to be constant), and l the carrier mean free path. The contribution of the lattice to thermal conductivity at high temperatures can be extrapolated by using the Debye approximation [27], l ∼ 1/T. At 50 K, l equals a characteristic inter-defect spacing and stops evolving as T decreases.…”
Section: Thermal Conductivitymentioning
confidence: 99%
“…That is, dκ/dT > 0, which is a typi- cal feature of phonon scattering in an amorphous solid and a disordered system, rather than in an ordered solid, of which experiences a decrease in κ(T) (varying with T −1 ) [27] as the temperature increases to below the Debye value, θ D . Because it occurs in a single crystal, however, this behavior cannot be due to any quenched structural disorder as in amorphous materials.…”
Section: Thermal Conductivitymentioning
confidence: 99%
“…6.14). In these series, LnPdSb-type compounds (Ln= Sr, Y, rare earths, specially Er) have high Seebeck coefficients below 300K [Mastronardi 1999], [Oestreich 2003], which could lead to interesting substituted materials for cooling. Zn 4 Sb 3 exists under three crystallographic varieties: -phase stable below -10°C, -phase from -10°C to 492°C and -phase from 492°C to the melting temperature of 566°C.…”
Section: 3a Half Heuslermentioning
confidence: 99%