Thermomechanical Response Model on a Reflection Photothermal Diffusion Waves (RPTD) for Semiconductor Medium

Lotfy, Kh.; Abo‐Dahab, S. M.; Tantawy, Ramy; Anwar, N.

doi:10.1007/s12633-019-00116-6

Cited by 63 publications

(14 citation statements)

References 24 publications

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“…Consider that the solid medium is an isotropic, homogeneous, semiconductor, has voids, photothermal, and under initial stress, rotation, and gravity, the governing fundamental equations of the problem take the following form 13 : Equation of motion

σ_{italicij, j} + F_{i} = ρ {\ddot{u}}_{i},

which tends to

((), μ - \frac{Ρ}{2}) \nabla^{2} u_{i} + ((), λ + μ + \frac{Ρ}{2}) \nabla e - γ \nabla normalΤ - δ_{n} \nabla N + b_{v} φ_{v, i} + F_{i} = ρ {\ddot{u}}_{i},

…”

Section: Basic Equationsmentioning

confidence: 99%

Section: Basic Equationsmentioning

confidence: 99%

“…Moreover, Abo‐Dahab and Abouelregal 12 investigated in detail a two‐dimensional problem in microstructure thermoelastic medium considering a uniform thermal shock. Lotfy et al 13 discussed the thermomechanical semiconducting response on a photothermal diffusion wave reflection. In Abo‐Dahab and Abd‐Alla, 14 the DPL theory on rotating magneto‐thermoelastic medium considering diffusion, initial stress, voids, and gravity was investigated.…”

Section: Introductionmentioning

confidence: 99%

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Electromagnetic field and initial stress on a photothermal semiconducting voids medium under thermoelasticity theories

Khalil

Abo‐Dahab

Kilany

2020

Math Methods in App Sciences

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In this paper, we investigate a volume fraction, electromagnetic field, photothermal, and initial stress impact on a homogeneous isotropic semiconducting generalized thermoelasticity solid. Three generalized thermoelasticity theories are considered: classical dynamical (CD), Lord and Shulman (LS), and dual‐phase‐lags (DPL). The equations governing the problem are presented considering the voids, photothermal, semiconducting, initial stress, and parameters concerning the theory of thermoelasticity in a generalized form. We applied the normal mode technique analysis to solve the algebraic system of equations in this phenomenon under suitable boundary conditions. The results showed that the photothermal, voids as a volume fraction, process of semiconductor, electromagnetic field, thermal relaxation times, and initial stress have a significant impact on the phenomenon. The physical quantities with some analytical comparisons are introduced analytically and displayed in graphs. A comparison was made between the obtained results and the works presented by others. If the volume fraction, electromagnetic field, and initial stress are neglected, the results obtained are deduced to Abo‐Dahab and Lotfy as a special case from the present study. The results obtained with neglecting the external parameters, viz, electromagnetic field, initial stress, voids, and phase lags, and considering the Laplace transform technique agree with the results of other works.

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σ_{italicij, j} + F_{i} = ρ {\ddot{u}}_{i},

which tends to

((), μ - \frac{Ρ}{2}) \nabla^{2} u_{i} + ((), λ + μ + \frac{Ρ}{2}) \nabla e - γ \nabla normalΤ - δ_{n} \nabla N + b_{v} φ_{v, i} + F_{i} = ρ {\ddot{u}}_{i},

…”

Section: Basic Equationsmentioning

confidence: 99%

Section: Basic Equationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electromagnetic field and initial stress on a photothermal semiconducting voids medium under thermoelasticity theories

Khalil

Abo‐Dahab

Kilany

2020

Math Methods in App Sciences

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“…We consider the case of 2-D, with the aim of determining the effects of external parameters on physical phenomena. The basic governing equations are listed [16]:…”

Section: Formulation Of Problemmentioning

confidence: 99%

Solution of Lord-Shulmans and dual-phase-lag theories problem on a photothermal rotational semiconductor medium with voids and initial stress

Alotaibi

2020

THERM SCI

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This paper discusses a photo-thermal rotational semiconductor medium with ini?tial stress, and voids by considering two thermoelastic theories: Lord-Shulman and Dual-Phase-Lag models. The equations of motion, temperature, voids, and photothermal have been investigated under two generalized thermoelastic theory. The technique of normal mode has been applied to solve the differential equa?tions system with appropriate boundary conditions. Quantities of physical interest such as displacement, stress components, concentration, temperature, and carrier density are calculated and displayed graphically to demonstrate the effect of the external parameters. The obtained results, by using the two theories, show that the dual-phase-lag theory gives an origin results comparing with obtained results by Lord-Shulman theory. By neglecting the initial stress and voids, and considering the only dual-phase-lag theory, then the results obtained in this paper are deduced to the results of Abbas et al. [1].

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“…Abd-Alla et al [18] studied the solutions of the transient coupled thermoelastic of an annular fins by the implicit finite-difference technique. Many researchers [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] used the many thermoelasticity theories to get the solutions of many problems.…”

Section: Introductionmentioning

confidence: 99%

A Study of Photo-Thermoelastic Wave in Semiconductor Materials With Spherical Holes Using Analytical-numerical Methods

Alzahrani

Abbas

2021

Preprint

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Analytical and numerical solutions are two basic tools in the study of photothermal interaction problems in semiconductor medium. In this paper, we compare the analytical solutions with the numerical solutions for thermal interaction in semiconductor mediums containing spherical cavities. The governing equations are given in the domain of Laplace transforms and the eigenvalues approaches are used to obtained the analytical solution. The numerical solutions are obtained by applying the implicit finite difference method (IFDM). A comparison between the numerical solutions and analytical solution are presented. It is found that the implicit finite difference method (IFDM) is applicable, simple and efficient for such problems.

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Thermomechanical Response Model on a Reflection Photothermal Diffusion Waves (RPTD) for Semiconductor Medium

Cited by 63 publications

References 24 publications

Electromagnetic field and initial stress on a photothermal semiconducting voids medium under thermoelasticity theories

Electromagnetic field and initial stress on a photothermal semiconducting voids medium under thermoelasticity theories

Solution of Lord-Shulmans and dual-phase-lag theories problem on a photothermal rotational semiconductor medium with voids and initial stress

A Study of Photo-Thermoelastic Wave in Semiconductor Materials With Spherical Holes Using Analytical-numerical Methods

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