Thin-film electron interferometers

Iogansen, L. V.

doi:10.3367/ufnr.0086.196505f.0175

Cited by 12 publications

(4 citation statements)

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“…34 The parallelism of the two correlations ( 1) and ( 2) is striking and shows the direct connection of the effective charge A 1/2 f (vm/vr) with the electron density r(r c ) in the H-bond. The mean value of the computed proportionality coefficient b in relation (1) (taking into account the constant factor (10 2 ) in the abscissa) agrees wellwithin 1%with the experimental value of relation (2). The comparison of both relations is shown in the Fig.…”

supporting

confidence: 74%

“…Besides the theoretical approach of QTAIM, quite a long time ago the experimental direct proportionality was suggested, which also described the whole range of H-bond energies with only one parameterthe intensication of the IR stretching mode n s of the acidic group AH on H-complex formation. 2 Taking into account that boththeoretical and experimentalapproaches are formally very similar, the comparison of the two is attempted here on the basis of published in literature data. The rationale for a such comparison is justied because the electron density r(r c ) and IR intensity A i N(vm/vQ i ) 2 (or the square root of the intensity of a fundamental IR band (A i 1/2…”

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confidence: 99%

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The hydrogen bond – practice and QTAIM theory

Rozenberg

2014

RSC Adv.

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supporting

confidence: 74%

mentioning

confidence: 99%

The hydrogen bond – practice and QTAIM theory

Rozenberg

2014

RSC Adv.

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“…Then, low-temperature, thermally stimulated depolarization in HBC can be defined as nonlinear quantum proton relaxation caused by the heating of the crystal in the absence of an external electric field [7,8]. This effect opens up the possibility of applying the quantum theory of proton conduction [1,5] to the study of nonlinear properties and the development of resonant tunnel diodes and quantum field-effect transistors based on thin films of composite materials (MIS, MSM structures) consisting of HBC-class crystals [9][10][11][12][13][14][15]. From this point of view, the memory elements of high-speed, non-volatile devices (DRAM, FeRAM) based on ferroelectric HBC (or materials similar to them in terms of properties and type of crystal structure) with a rectangular hysteresis loop (triglycine sulfate (TGS), ferric salt) are promising for modern computer technology [16][17][18][19][20][21][22][23][24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Influence of Quantum Effects on Dielectric Relaxation in Functional Electrical and Electric Energy Elements Based on Proton Semiconductors and Dielectrics

Kalytka,

Baimukhanov,

Neshina

et al. 2023

Applied Sciences

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Using the quasi-classical kinetic theory of dielectric relaxation, in addition to existing methods, fundamental mathematical expressions are built, which make it possible to more strictly consider the effects of the main charge carriers’ (protons’) tunneling on the numerical values of the molecular parameters (activation energy, equilibrium concentration) of protons in HBC. The formulas for calculating the statistically averaged non-stationary quantum transparency of a parabolic potential barrier for protons have been modernized by more stringent consideration of the effects of corrections caused by an external electric field. For the model of a double-symmetric potential well, a generalized nonlinear solution of the quasi-classical kinetic equation of dielectric relaxation in HBC was built. The phenomenological Bucci-Rive formula for thermally stimulated depolarization current density (TSDC) was first investigated, taking into account quantum transparency, for the case of a parabolic potential barrier. The choice of the parabolic shape of the potential barrier allowed, at a theoretical level, for the mathematical model of relaxation polarization to be brought closer to the conditions of the real spatial structure of the crystal potential field, in comparison with the rectangular potential barrier model. It has been found that quantum effects due to proton tunnel transitions significantly affect the mechanism of thermally stimulated depolarization currents in HBC, over a wide temperature range (50–550 K) and external field parameters (0.1–1 MV/m). Generalized solutions of the nonlinear kinetic equation, recorded considering the effects of field parameters on proton tunnel transitions, made it possible to significantly approximate the theoretical values of activation energies, equilibrium concentrations of protons and amplitudes of the theoretical maxima of the current density of thermally stimulated depolarization, according to their experimental values in the field of low-temperature (50–100 K) and high-temperature (350–550 K) maxima of TSDC density in HBC. For the first time, precision measurements of TSDC temperature spectra were carried out for chalcanthite crystals. The effects of alloying impurities concentrations and crystal calcination temperatures on the parameters of experimental maxima in the TSDC spectrum of chalcanthite were established. A physical mechanism of the quantum tunnel motion of protons in HBC with a complex crystal structure (crystalline hydrates, layered silicates, ferroelectric HBC (KDP, DKDP)) is described. The patterns found in this article indicate a fairly high degree of applied scientific significance for the obtained theoretical results, allowing for the further development of electrophysics and optoelectronics of heterogeneous structures (MIS, MSM) based on proton semiconductors and dielectrics (PSD) and their composites.

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“…Currently, quite a large amount of experimental data have been accumulated on the use of proton semiconductors and dielectrics (PSCD), mainly in the field of electrochemical technologies and physical chemistry (when developing solid-state electrolytes (perovskites, orthoperiodates and alkali metal biperiodates of alkali metals) [18][19][20][21][22][23][24][25]. At the same time, there are not many practical applications of PSCD properties [17,[26][27][28][29][30][31][32] in the field of theoretical electrical engineering [33][34][35][36][37][38][39][40][41], physical electronics and microelectronics [42].…”

Section: Scientific and Practical Significance Of The Study Resultsmentioning

confidence: 99%

Theoretical Studies of Nonlinear Relaxation Electrophysical Phenomena in Dielectrics with Ionic–Molecular Chemical Bonds in a Wide Range of Fields and Temperatures

et al. 2022

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This paper is devoted to the development of generalized (for a wide range of fields (100 kV/m–1000 MV/m) and temperatures (0–1500 K) in the radio frequency range (1 kHz–500 MHz)) methods for the theoretical investigation of the physical mechanism of nonlinear kinetic phenomena during the establishment of the relaxation polarization, due to the diffusion motion of the main charge carriers in dielectrics with ionic–molecular chemical bonds (hydrogen-bonded crystals (HBC), including layered silicates, crystalline hydrates and corundum–zirconium ceramics (CZC), etc.) in an electric field. The influence of the nonlinearities equations of the initial phenomenological model of dielectric relaxation (in HBC-proton relaxation) on the mechanism for the formation of volume–charge polarization in solid dielectrics is analyzed. The solutions for the nonlinear kinetic Fokker–Planck equation, together with the Poisson equation, for the model of blocked electrodes are built in an infinite approximation (including all orders k of smallness without dimensional parameters) of perturbation theory for an arbitrary order r of the frequency harmonic of an alternating external polarizing field. It has been established that the polarization nonlinearities in ion-molecular dielectrics, already detected at the fundamental frequency, are interpreted in the mathematical model (for the first time in this work) as interactions of the relaxation modes of the volume charge density calculated on different orders of spatial Fourier harmonics. At the fundamental frequency of the field, an analytical generalized expression is written for complex dielectric permittivity (CDP), which is expressed analytically in terms of special relaxation parameters, which are quite complex real functions in the fields of frequency and temperature. The theoretical CDP and the dielectric loss tangent spectra studied depend on the nature of the relaxation processes in the selected temperature range (Maxwell and diffusion relaxation; thermally activated and tunneling relaxation), which is relevant from the point of view of choosing exact calculation formulas when analyzing the optimal operating modes of functional elements (based on dielectrics and their composites) for circuits of instrumentation, radio engineering and power equipment in real industrial production.

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Thin-film electron interferometers

Cited by 12 publications

References 0 publications

The hydrogen bond – practice and QTAIM theory

The hydrogen bond – practice and QTAIM theory

Influence of Quantum Effects on Dielectric Relaxation in Functional Electrical and Electric Energy Elements Based on Proton Semiconductors and Dielectrics

Theoretical Studies of Nonlinear Relaxation Electrophysical Phenomena in Dielectrics with Ionic–Molecular Chemical Bonds in a Wide Range of Fields and Temperatures

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