Three-dimensional kinetic Monte Carlo simulation of prepatterned quantum-dot island growth

Pan, Ernian; Sun, M.; Chung, Peter

doi:10.1063/1.2812572

Cited by 8 publications

(4 citation statements)

References 31 publications

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“…The research on low-dimensional structures such as quantum dots (QDs) shows promising properties in future optoelectronic devices. A great deal of attention has been paid to the growth [1][2][3], the electronic properties [4][5][6] and the transport mechanisms [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of self-assembled InAs/InAlAs quantum dots on InP

Hamdaoui

Ajjel

Maaref³

et al. 2010

Semicond. Sci. Technol.

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The characteristics of InAs self-assembled quantum dots (QDs) grown on InAlAs/InP (001) have been investigated by capacitance-voltage (C-V) measurements and deep-level transient spectroscopy (DLTS). The depth profile of the apparent electron concentration obtained by C-V measurements shows significant carrier accumulation around the position of the InAs QDs plane. In addition to the D 1 -D 5 traps, which are commonly detected in InAlAs layers grown on InP by molecular beam epitaxy (MBE), DLTS investigations show three InAs-related levels located at about 76, 202 and 246 meV below the InAlAs conduction band edge. The applied field is found to significantly enhance tunnel emission processes as seen in the broadening of the peaks with increasing reverse bias. The results suggest that defects in the material barrier can enhance electron tunnelling through barriers.

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Section: Introductionmentioning

confidence: 99%

Electrical properties of self-assembled InAs/InAlAs quantum dots on InP

Hamdaoui

Ajjel

Maaref³

et al. 2010

Semicond. Sci. Technol.

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“…Our 3D simulation of self-assembled NC synthesis employs the solid-on-solid (SOS) model. − We represent the substrate with an fcc lattice model structure in a (100) plane. The metal atoms deposited directly onto the substrate (1st layer) are allowed to occupy alternate ( x , y ) locations, as shown in gray in Figure a.…”

Section: The Kmc Modelmentioning

confidence: 99%

Controlled Self-Assembly of Nanocrystalline Arrays Studied by 3D Kinetic Monte Carlo Modeling

2011

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Fabrication of self-assembled arrays of nanocrystals (NCs) by physical vapor deposition (PVD) is a promising technique rated highly for its potential for various electronic, photonic, and sensing applications. However, the self-assembly process is not straightforward to control and direct in a desired way. A detailed understanding of how to control the size, shape, and density of self-assembled NCs by varying the accessible PVD process conditions, such as deposition rate, duration, or temperature, is critical for the potential of self-assembled nanofabrication to be fully realized. In this paper, we report a systematic kinetic Monte Carlo modeling that explicitly represents PVD synthesis of self-assembled metallic NCs on a crystalline substrate. We investigate how varying the duration of deposition, deposition rate, temperature, and substrate wetting conditions may affect the morphologies of arrays of self-assembled metallic islands and compare our results with previously reported experimentally observed surface morphologies generated by PVD and theoretical studies.

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“…Island formation is one possible way for an adsorbate to release this strain. Beyond a certain threshold coverage, the epitaxial system can maintain a lower energy by transferring particles from the island edge to the upper layer because the transition leads to a decrease in the contact area between the substrate and the adsorbate [43][44][45]. Thus, particle transitions to the upper layers lead to a relaxation in the local strain field.…”

Section: Colloidal Island Formationmentioning

confidence: 99%

“…This instability has been theoretically described primarily by approaches applying continuum mechanics to study the initial film instability [49,50], the evolution of island shapes [51] or the additional role of a wetting interaction [52], or, alternatively, by approaches which are based on a combination of discrete microscopic and continuum elasticity descriptions [53]. Quite instructive recent examples of simulations of quantum dot island growth over a strained (and pre-patterned [45]) surface can be found in [44] or in [46] where the question is addressed of how island growth switches between pyramid and dome-like shapes as found in [47].…”

Section: Colloidal Island Formationmentioning

confidence: 99%

Colloidal model system for island formation

Deb

Grünberg²

2009

J. Phys.: Condens. Matter

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We present model calculations to explore the possibility of colloidal island formation over strained surfaces. Colloids, aggregating due to attractive depletion interactions, are deposited onto a colloidal surface whose lattice constant and geometry can be varied by optical forces. This allows precise control of the strain between the substrate and the colloidal adsorbate. Three different strain fields are considered: fields with either an unidirectional or a hexagonal variation of strain, and fields with a combination of both variations. We find that the unidirectional field induces the formation of infinitely extended ridges, while hexagonal strain fields lead to regular pyramidal island structures which can be distorted in a controlled way by adding the unidirectional strain component. We furthermore study the dependence of island size on strain strength for the hexagonal strain pattern and find that the area occupied by an island is a constant fraction of the strain field's repeat unit.

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Three-dimensional kinetic Monte Carlo simulation of prepatterned quantum-dot island growth

Cited by 8 publications

References 31 publications

Electrical properties of self-assembled InAs/InAlAs quantum dots on InP

Electrical properties of self-assembled InAs/InAlAs quantum dots on InP

Controlled Self-Assembly of Nanocrystalline Arrays Studied by 3D Kinetic Monte Carlo Modeling

Colloidal model system for island formation

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