Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates

“…A similar idea is now being pursued in the InGaN system along with the LEO technique. Our study results have already shown that with the two-step LEO technique, enhanced Indium incorporation as well as the reduction of Indium phase segregation can be achieved in the single InGaN quantum well grown on nonplanar LEO GaN, which is much superior to the counterpart on planar GaN [14].…”

Blue LED growth from 2 inch to 8 inch

“…The technique of low temperature GaN nucleation following 3D to 2D transition growth was employed in order to achieve high crystal quality [3,4]. The 3D buffer layer growth can improve surface morphology and reduce dislocation density [5,6]. For the GaN and InGaN/GaN MQW growth, the H 2 , N 2 , NH 3 hydride flows, growth chamber pressure and rotation speed were kept the same for all size wafers.…”