Three-dimensional quantum-corrected Monte Carlo device simulator of n-FinFETs

Abstract

The Effective Potential approach was successfully incorporated as a quantum correction to a Monte Carlo simulator of n-FinFETs to take into account the electron confinement in nanoscale n-FinFETs. The electron line density calculated by the Effective Potential approach agrees very well with the one calculated by a Schrödinger-Poisson solver. We compared the results obtained by the semiclassical and quantum-corrected Monte Carlo simulator. The quantum-corrected Monte Carlo device simulator can predict volume inversion, which reduces the impact of surface roughness scattering, improving the electron velocity. Additionally, the quantum corrections allow the modelling of the reduction of electron density in the n-FinFETs channel. This is a result of the reduced density of states in two-dimensional confined transistors and degrades the on-current in comparison with the one predicted by a semiclassical Monte Carlo simulator.