Ti 2 AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

Cabioc’h, Thierry; Alkazaz, Malaz; Beaufort, M. F.; Nicolaï, J.; Eyidi, D.; Eklund, Per

doi:10.1016/j.materresbull.2016.03.031

Cited by 28 publications

(12 citation statements)

References 37 publications

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“…This result indicates the presence of swelling along [0001], which results from the accumulation of defects created by the ion irradiation. This is similar to disorder mechanisms previously reported in intermediate hexagonal (Cr,Al)C x 25 and (Ti,Al)N x 26 solid solution phases, in which cations were randomly located at the cation sites.…”

Section: Resultssupporting

confidence: 89%

Disorder in Mn+1AXn phases at the atomic scale

et al. 2019

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Atomic disordering in materials alters their physical and chemical properties and can subsequently affect their performance. In complex ceramic materials, it is a challenge to understand the nature of structural disordering, due to the difficulty of direct, atomic-scale experimental observations. Here we report the direct imaging of ion irradiation-induced antisite defects in Mn+1AXn phases using double CS-corrected scanning transmission electron microscopy and provide compelling evidence of order-to-disorder phase transformations, overturning the conventional view that irradiation causes phase decomposition to binary fcc-structured Mn+1Xn. With the formation of uniformly distributed cation antisite defects and the rearrangement of X anions, disordered solid solution γ-(Mn+1A)Xn phases are formed at low ion fluences, followed by gradual transitions to solid solution fcc-structured (Mn+1A)Xn phases. This study provides a comprehensive understanding of the order-to-disorder transformations in Mn+1AXn phases and proposes a method for the synthesis of new solid solution (Mn+1A)Xn phases by tailoring the disorder.

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Section: Resultssupporting

confidence: 89%

Disorder in Mn+1AXn phases at the atomic scale

et al. 2019

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“…Titanium nitrides are synthesized by various processes such as DC or RF magnetron sputtering [1,3,4,16,21,22], pulsed laser irradiation [23] . .…”

Section: Introductionmentioning

confidence: 99%

“…. It is worth noting that since PVD methods work under conditions of deposition far from equilibrium, higher nitrogen contents are dissolved in Ti compared with those corresponding to the equilibrium solubility [22].…”

Section: Introductionmentioning

confidence: 99%

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

et al. 2017

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Abstract:The physical properties including the mechanical, optical and electrical properties of Ti nitrides and silicides are very attractive for many applications such as protective coatings, barriers of diffusion, interconnects and so on. The simultaneous formation of nitrides and silicides in Ti films improves their electrical properties. Ti films coated on Si wafers are heated at various temperatures and processed in expanding microwave (Ar-N 2 -H 2 ) plasma for various treatment durations. The Ti-Si interface is the centre of Si diffusion into the Ti lattice and the formation of various Ti silicides, while the Ti surface is the centre of N diffusion into the Ti film and the formation of Ti nitrides. The growth of silicides and nitrides gives rise to two competing processes which are thermodynamically and kinetically controlled. The effect of thickness on the kinetics of the formation of silicides is identified. The metastable C 49 TiSi 2 phase is the main precursor of the stable C 54 TiSi 2 phase, which crystallizes at about 600 • C, while TiN crystallizes at about 800 • C.

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“…The hypothetical Ti 3 AlN 2 phase predicted to be metastable by DFT calculations performed by Holm et al [16] has not been synthesized and is unlikely to exist [3,11]. Only Ti 2 AlN has been obtained as a thin film via solid state reactions [11,12,17] and reactive…”

Section: Introductionmentioning

confidence: 99%

Solid state formation of Ti4AlN3 in cathodic arc deposited (Ti1−xAlx)Ny alloys

Schramm¹,

Pauly²,

Johansson-Jöesaar³

et al. 2017

Acta Materialia

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Reactive cathodic arc deposition was used to grow substoichiometric solid solution cubic c-(Ti 1-x Al x)N y thin films. The films were removed from the substrate and then heated in an argon environment to 1400 °C. Via solid state reactions, formation of MAX phase Ti 4 AlN 3 was obtained. Additional phases such as Ti 2 AlN, c-TiN, w-AlN, Al 5 Ti 2 and Al 3 Ti were also present during the solid state reaction. Ti 4 AlN 3 formation was observed in samples with an Al metal fraction x < 0.63 and a nitrogen content 0.4 < y < 0.6. Regardless of the initial composition, formation of Ti 4 AlN 3 started in Ti 2 AlN crystal plates in the temperature range between 1200-1400 °C. Accompanying the onset of Ti 4 AlN 3 was the presence of an intermediate structure identified as Ti 6 Al 2 N 4 , consisting of alternating layers of intergrown Ti 2 AlN and Ti 4 AlN 3 phases with a half-unit-cell stacking. We suggest that the formation of Ti 4 AlN 3 occurred via intercalation of aluminum and nitrogen along the basal plane accompanied by a simultaneous detwinning process. In addition we propose that this formation mechanism can be used to obtain MAX phases of high n order.

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Ti 2 AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

Cited by 28 publications

References 37 publications

Disorder in Mn+1AXn phases at the atomic scale

Disorder in Mn+1AXn phases at the atomic scale

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

Solid state formation of Ti4AlN3 in cathodic arc deposited (Ti1−xAlx)Ny alloys

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