Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon

Liao, Hsueh-Chun; Lin, Jui-Chang; Chang, Ruey-Dar

doi:10.7567/jjap.57.081301

Cited by 4 publications

(3 citation statements)

References 31 publications

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“…24 In our earlier study, the amount of active boron remained almost the same during FA at 750°C in samples with carbon. 25 However, this research revealed that carbon promoted the decay of active phosphorus under the same annealing conditions. Thus, the interaction between phosphorus and carbon atoms was not mediated by interstitials.…”

Section: Resultsmentioning

confidence: 71%

Deactivation of Phosphorus by Carbon in Recrystallized Silicon

Liao¹,

Lin²,

Chang³

2019

ECS J. Solid State Sci. Technol.

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Carbon has been used to suppress the diffusion of phosphorus in silicon transistors. The thermal stability of phosphorus should be considered when carbon is doped in n-type source and drain regions. In this study, carbon and phosphorus were implanted together in preamorphized silicon to investigate the effect of carbon on phosphorus activation. Phosphorus deactivation was caused by carbon at temperatures above 600°C following the solid-phase epitaxial regrowth of the amorphous layer, which was completed at 550°C. The deactivation saturated after long-term annealing at 750 or 850°C. The active phosphorus dose that was lost by the interaction between carbon and phosphorus was partially recovered at 925°C. The phosphorus deactivation that was caused by carbon was proportional to the dose of carbon. However, a larger proportion of the phosphorus was deactivated by carbon when the dose of implanted phosphorus was larger, suggesting that the deactivation was governed by a phosphorus diffusion mechanism, which was enhanced at high concentrations through charged vacancies in carbon-doped silicon.

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Section: Resultsmentioning

confidence: 71%

Deactivation of Phosphorus by Carbon in Recrystallized Silicon

Liao¹,

Lin²,

Chang³

2019

ECS J. Solid State Sci. Technol.

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“…A lower activation of boron was also observed by others in case of high‐dose carbon co‐implantation. [ 9 ] They discussed possible boron–carbon pairs as reason for the increased deactivation of boron. But it has to be noted that B s –C s pairs are discussed to be acceptors as well.…”

Section: Resultsmentioning

confidence: 99%

Development of Low‐Gain Avalanche Detectors in the Frame of the Acceptor Removal Phenomenon

Lauer

Peh

Krischok

et al. 2022

Physica Status Solidi (a)

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Fast silicon detectors are crucial for a lot of applications, [1] e.g., the experiments at large hadron collider (LHC) at CERN to obtain timeresolved trajectories of particles. A concept to realize such fast silicon detectors are the low-gain avalanche detectors (LGAD). They combine the advantages of normal n-i-p-diodes such as a low noise with a large signal of avalanche multiplication diodes. [2] LGADs operate with a gain of about 10. The avalanche multiplication region is usually obtained by deep boron doped layers. [3] Nevertheless, these LGADs have a drawback if they are irradiated. The gain layer "disappears" after irradiation as a consequence of a deactivation of the gain layer doping species, which is usually boron. [4,5] This means that, e.g., boron, loses after irradiation its properties as an acceptor to provide a negative space charge.In this contribution, the focus is first on LGAD device manufacturing at CiS. Afterward, an experiment is described and discussed, which investigates the acceptor removal phenomenon for the three acceptors boron, gallium, and indium in silicon. Therefore, boron, gallium, and indium were implanted into silicon. Additionally, coimplantation of carbon, oxygen, nitrogen, and fluorine was made. It was found in the literature that for carbon co-implantation the acceptor removal effect can be reduced. [6] Therefore, this study investigates different co-implantation species if they have an impact on the acceptor removal phenomenon. The samples underwent an activation anneal and were then investigated by 4-point-probe (4pp), low temperature photoluminescence spectroscopy (LTPL) and secondary ion mass spectrometry (SIMS) before and after irradiation with electrons and protons.

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“…The implanted boron concentrations were below that causing deactivation via boron clustering. [27][28][29] The experimental results only represents the reaction kinetics in the early stage of activation. Therefore, the activation energies related to the reaction mechanisms differed from that in previous studies.…”

Section: Resultsmentioning

confidence: 99%

Initial activation behavior of boron at low temperatures with implantation doses below the amorphization threshold

Chang

Lin

Lee

2020

Jpn. J. Appl. Phys.

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The initial behavior of boron activation at low temperatures was experimentally studied at implantation doses below the threshold for amorphization of the silicon substrates. A test structure was developed to analyze the activation in the early stage of annealing at temperatures below 400 °C. Saturation of the activation level following the decay of the activation rate was observed during annealing for long times at temperatures between 350 °C and 400 °C. Boron activation was enhanced due to the channeling effect of the implanted boron ions when the implantation tilt angle was reduced from 7°to 0°. However, the active boron percentage declined with increasing implantation dose. Boron activation was degraded by silicon implantation at low doses following the boron implantation. The low activation energies extracted from the experimental data indicated that boron activation was limited by the metastable defect complexes under subamorphizing implantation.

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Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon

Cited by 4 publications

References 31 publications

Deactivation of Phosphorus by Carbon in Recrystallized Silicon

Deactivation of Phosphorus by Carbon in Recrystallized Silicon

Development of Low‐Gain Avalanche Detectors in the Frame of the Acceptor Removal Phenomenon

Initial activation behavior of boron at low temperatures with implantation doses below the amorphization threshold

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