Titanium Doped Copper (I) Oxide Thin Films for Solar Cell Application

Abstract

There has been a need for a more convenient, greener, and efficient material for energy conversion and electronic applications many years ago. Cu2O thin films, produced using the spray pyrolysis method, offer a solution that meets economic viability and cost requirements. It is widely believed that these films will enable the development of functional technologies. In this study, spray pyrolysis was used to add titanium to copper (I) oxide thin films. The deposition temperature was set at 200◦C, and the films were annealed for 2 hours at the same temperature. Investigation of optical, surface morphology, and photovoltaic characteristics of the resulting Ti-doped Cu2O films were thoroughly carried out. The best features were observed in the Cu2O films doped with 3% titanium. One notable change observed in the Ti-doped Cu2O films was a shift in the near-band emission from 385 nm to 400 nm. Additionally, the band gap of the films decreased from 2.35 to 1.98 eV when doped with 3% titanium. These changes resulted in significant improvements in the short circuit current density and open circuit voltage of Cu2O (Ti)-based solar cells. Overall, the addition of titanium to p-CuO has shown promising results in enhancing the optical and photovoltaic properties of Cu2O thin films. This research paves the way for the development of more efficient and cost-effective energy conversion and electronic devices.