Tl/sub 2/Ba/sub 2/CaCu/sub 2/O/sub 8/ films: Growth and applications in dc SQUIDs and microwave devices

Chen, Y.F.; Ivanov, Z. G.; Johansson, Lars‐Gunnar; Kojouharov, R.; Angelov, I.; Olsson, Eva; Roddatis, V.A.; Stepantsov, E. A.; Tzalenchuk, Alexander; Vasiliev, Alexander; Claeson, T.

doi:10.1109/77.621746

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…1 See, for example, Ijsselsteijn et al, 1993Ijsselsteijn et al, , 1994Vollnhals et al, 1994;Li et al, 1995;Petersen, Stolzel, et al, 1995;Boikov et al, 1997aBoikov et al, , 1997bY. Chen et al, 1997;Horng et al, 1997;Villegier, 1997a, 1997b;Tsaiet al, 1998.…”

Section: Structural Propertiesmentioning

confidence: 99%

Grain boundaries in high-Tcsuperconductors

2002

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Since the first days of high-T c superconductivity, the materials science and the physics of grain boundaries in superconducting compounds have developed into fascinating fields of research. Unique electronic properties, different from those of the grain boundaries in conventional metallic superconductors, have made grain boundaries formed by high-T c cuprates important tools for basic science. They are moreover a key issue for electronic and large-scale applications of high-T c superconductivity. The aim of this review is to give a summary of this broad and dynamic field. Starting with an introduction to grain boundaries and a discussion of the techniques established to prepare them individually and in a well-defined manner, the authors present their structure and transport properties. These provide the basis for a survey of the theoretical models developed to describe grain-boundary behavior. Following these discussions, the enormous impact of grain boundaries on fundamental studies is reviewed, as well as high-power and electronic device applications. CONTENTS I. Introduction 485 II. Introduction to Grain Boundaries 486 III. Preparation of Single Grain Boundaries 488 A. Bicrystalline junctions 489 B. Biepitaxial junctions 489 C. Step-edge junctions 491 IV. Structural Properties 491 V. Transport Properties of Grain Boundaries 496 A. Current-voltage characteristics 496 B. Critical current density 498 1. Dependence on grain-boundary angle 498 2. Temperature dependence of the critical currents 502 3. Magnetic-field dependence of the critical currents 502 C. Current-phase relation 504 D. Normal-state resistivity 504 E. The I c R n product 505 F. Grain-boundary capacitance 506 G. Microwave properties 507 H. Grain-boundary noise 507 I. Self-generated magnetic flux 509 J. Penetration of magnetic flux into grain boundaries 510 VI. Effects of Doping 510 VII. Grain-Boundary Mechanisms 511 A. Mechanisms based on structural properties 511 B. Mechanisms based on deviations from ideal stoichiometry 512 C. Order-parameter symmetry-based mechanisms 514 D. Interface charging and band bending 515 E. Mechanisms based on direct suppression of the pairing mechanism 516 VIII. Control of Grain Boundaries with Electric Fields or Quasiparticle Injection 517 A. Applied electric fields 517 B. Quasiparticle injection 518 IX. Irradiation of Grain Boundaries 518 A. Irradiation with electrons 518 B. Irradiation with light 518 C. Irradiation with ions 519 X. Bulk Applications 519 A. Powder-in-tube method 520 B. Coated conductors 520 XI. Applications of Grain Boundaries in Thin Films 522 A. SQUIDs 522 B. Radiation detectors and spectrometers 524 C. Three-terminal devices 525 D. Superconducting logic circuits 526 E. Research devices 526 XII. Summary and Outlook 528 Acknowledgments 529 References 529

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Section: Structural Propertiesmentioning

confidence: 99%

Grain boundaries in high-Tcsuperconductors

2002

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“…The phase noise, thermal stability and output power are the main figures of merit when comparing microwave oscillators. To study the impact of Tl cuprates on these numbers a parallel feedback oscillator with a transmissiontype high-Q Tl-2212 resonator and an HEMT low-noise amplifier was designed and tested (for details on device design and performance see [11]).…”

Section: X-band Microwave Oscillator Stabilized With a Tl-2212 Resonatormentioning

confidence: 99%

Thallium- and mercury-containing cuprates in electronic devices

Ivanov

Johansson

1997

Supercond. Sci. Technol.

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Results on the synthesis of Tl-and Hg-based thin films featuring different numbers of CuO 2 planes are presented. At optimal annealing conditions T c of 108 K and 92 K were achieved for Tl-2212 and Tl-2201 films, respectively. Tl-2201 films can be grown with orthorhombic or tetragonal structure depending mainly on the Tl content. Bicrystal and step-edge weak links were fabricated in Tl-2212 films with T c ranging from 105 to 109 K. The weak links were studied and applied in dc SQUIDS. Microwave resonators with a microstrip configuration was designed and used in oscillators at 12 GHz frequency.

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Transport properties of submicron YBa2Cu3O7−δ step-edge Josephson junctions

Larsson

Tzalenchuk

Ivanov

2001

Journal of Applied Physics

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Submicron step-edge Josephson junctions in YBa2Cu3O7−δ (YBCO) thin films were fabricated and studied. All measured junctions fall into three categories: low critical current resistively shunted Josephson junctions, intrinsic Josephson junctions, and quasiparticle tunnel junctions. The transport in the junctions is correlated with the microstructure of YBCO films grown on the step edge. We argue that the properties of conventional step-edge junctions can be understood as a superposition of those types.

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Tl/sub 2/Ba/sub 2/CaCu/sub 2/O/sub 8/ films: Growth and applications in dc SQUIDs and microwave devices

Cited by 4 publications

References 14 publications

Grain boundaries in high-Tcsuperconductors

Grain boundaries in high-Tcsuperconductors

Thallium- and mercury-containing cuprates in electronic devices

Transport properties of submicron YBa2Cu3O7−δ step-edge Josephson junctions

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