Toward Fully Printed Memristive Elements: a-TiO<sub>2</sub> Electronic Synapse from Functionalized Nanoparticle Ink

Salonikidou, Barbara; Takeda, Yasunori; Borgne, Brice Le; England, Jonathan; Tokito, Shizuo; Sporea, Radu A.

doi:10.1021/acsaelm.9b00701

Cited by 21 publications

(18 citation statements)

References 69 publications

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“…Inkjet printers are used for automated drop casting and typically operate with a picoliter droplet volume and provide droplet deposition with 10–20 μm spatial resolution. The thickness of the film may be variable and usually exceeds 100 nm (Duraisamy et al, 2012 ), although a lower value of 80 nm has been reported recently (Salonikidou et al, 2019 ).…”

Section: Synthesis and Fabricationmentioning

confidence: 99%

Memristive TiO2: Synthesis, Technologies, and Applications

et al. 2020

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Titanium dioxide (TiO 2 ) is one of the most widely used materials in resistive switching applications, including random-access memory, neuromorphic computing, biohybrid interfaces, and sensors. Most of these applications are still at an early stage of development and have technological challenges and a lack of fundamental comprehension. Furthermore, the functional memristive properties of TiO 2 thin films are heavily dependent on their processing methods, including the synthesis, fabrication, and post-fabrication treatment. Here, we outline and summarize the key milestone achievements, recent advances, and challenges related to the synthesis, technology, and applications of memristive TiO 2 . Following a brief introduction, we provide an overview of the major areas of application of TiO 2 -based memristive devices and discuss their synthesis, fabrication, and post-fabrication processing, as well as their functional properties.

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Section: Synthesis and Fabricationmentioning

confidence: 99%

Memristive TiO2: Synthesis, Technologies, and Applications

et al. 2020

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“…Memristor is consisted of bottom and top metallic electrodes with sandwiched switching layer. In the literature, memristor size varies from nm to micrometer depending on the technology used in the development of memristor [55]. Commonly, the printed memristor are comparatively of large size i.e., in micrometer whereas, the solid state memristors are in nanometer size.…”

Section: Memristor Fabrication Techniquesmentioning

confidence: 99%

Memristor Fabrication Through Printing Technologies: A Review

Ali

Khan

et al. 2021

IEEE Access

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Memristor got the significant attraction to be the next generation memory device due to its small size, simple architecture, high density, and low power consumption. A memristor is a passive twoterminal primary electronic device with a built-in non-volatile memory function that can be fabricated in a crossbar structure. In the literature, independent studies have been reported on memristor manufacturing concerning the spatial resolution of the crossbar electrodes, and thickness of the active layer. However, this paper presents a comprehensive review different from others by comparing all the additive manufacturing technologies and their limitations for the development of a memristor array. A detailed study is performed about the pattern resolution, active layer fabrication, commonly used substrates, and device encapsulation methods. This review will provide a strong basis for the researchers, especially those working in the field of printed memristor devices.INDEX TERMS Memristor, printing technologies, thin films, crossbar electrodes, memristor fabrication.

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“…The dominance of EHD printing methods for fabricating memristive structures is attributed to the high patterning resolution which can be achieved with this technique and which can extent below 100 nm [26]. Nevertheless, a number of fully printed memristive systems using the standard ink-jet technique [27][28][29][30][31] and aerosol jet printing [32,33] have been reported.…”

Section: State-of-the-artmentioning

confidence: 99%

Memristive devices based on mass printed organic resistive switching layers

et al. 2021

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Resistive random-access memory is a candidate for next-generation non-volatile memory architectures. In this study, we use flexographic roll-to-roll printing technology for deposition of the resistive layer, a printing method that allows fast and cost-effective fabrication to create non-volatile resistive memory devices. Metal-free organic polymers blends composed of poly(methyl methacrylate) (PMMA) and a surplus of poly(vinyl alcohol) (PVA) serve as the active layer. Microscopic studies of the roll-to-roll printed layers show circular domains of PMMA embedded in PVA. The influence of the PMMA content in the polymer blend is investigated with respect to the performance and reliability of the resistive memory cells. Electrical characterization reveals a retention time of at least eleven days, a Roff/Ron ratio of approx. two orders and write/erase voltages of + 1/−2 V.

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Toward Fully Printed Memristive Elements: a-TiO₂ Electronic Synapse from Functionalized Nanoparticle Ink

Cited by 21 publications

References 69 publications

Memristive TiO2: Synthesis, Technologies, and Applications

Memristive TiO2: Synthesis, Technologies, and Applications

Memristor Fabrication Through Printing Technologies: A Review

Memristive devices based on mass printed organic resistive switching layers

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Toward Fully Printed Memristive Elements: a-TiO2 Electronic Synapse from Functionalized Nanoparticle Ink

Cited by 21 publications

References 69 publications

Memristive TiO2: Synthesis, Technologies, and Applications

Memristive TiO2: Synthesis, Technologies, and Applications

Memristor Fabrication Through Printing Technologies: A Review

Memristive devices based on mass printed organic resistive switching layers

Contact Info

Product

Resources

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Toward Fully Printed Memristive Elements: a-TiO₂ Electronic Synapse from Functionalized Nanoparticle Ink