Towards energy filtering in Mg2X-based composites: Investigating local carrier concentration and band alignment via SEM/EDX and transient Seebeck microprobe analysis

Ghosh, Sanyukta; Naithani, Harshita; Ryu, Byungki; Oppitz, Gregor; Müller, Eckhard; de Boor, Johannes

doi:10.1016/j.mtphys.2023.101244

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2024

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Cited by 2 publications

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“…24,25 The presence of potential barriers at the interfaces, arising from the dissimilar Fermi-level positions between the bulk material and nanoprecipitates, can block the movement of low-energy charge carriers. 26–28 This increases the average energy of charge carriers and, subsequently, enhances the Seebeck coefficient.…”

Section: Introductionmentioning

confidence: 99%

Enhanced thermoelectric properties of In-filled Co₄Sb₁₂ by dispersion of reduced graphene oxide

Ghosh,

Jain,

Mishra

et al. 2024

Dalton Trans.

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Section: Introductionmentioning

confidence: 99%

Enhanced thermoelectric properties of In-filled Co₄Sb₁₂ by dispersion of reduced graphene oxide

Ghosh,

Jain,

Mishra

et al. 2024

Dalton Trans.

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Instability Mechanism in Thermoelectric Mg₂(Si,Sn) and the Role of Mg Diffusion at Room Temperature

Duparchy,

Deshpande,

Sankhla

et al. 2024

Small Science

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Mg2(Si,Sn) shows great promise as thermoelectric material as it is made from non‐toxic, abundant, and cost‐effective elements offering high performance. This has been emphasized by several thermoelectric generator prototypes, demonstrating technological maturity. However, material stability is paramount for large‐scale applications whereas we reveal here that the thermal stability of n‐type Mg2(Si,Sn) may be limited even at room temperature (RT). Integral thermoelectric properties measurements, locally resolved Seebeck coefficient analysis, scanning electron microscopy/energy‐dispersive X‐ray spectroscopy, and atomic force microscopy are employed to assess changes of n‐type samples stored in ambient atmosphere for years, revealing the evolution of the carrier concentration and transport properties in the material as well as surface degradation. This is caused by the diffusion of loosely bound Mg from the bulk towards the surface and subsequent oxidation, leading to a change of Mg‐based intrinsic defect concentrations, thereby degrading the thermoelectric performance. This microscopic mechanism is backed up by first‐principles calculations, revealing that Mg diffusivity in Mg2(Si,Sn) is high at RT and that diffusion occurs mainly via Mg vacancies. The observed much faster degradation of Sn‐rich Mg2(Si,Sn) can be correlated with the higher density of Mg vacancies in Mg2Sn compared to Mg2Si, as predicted from defect formation energies.

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Towards energy filtering in Mg2X-based composites: Investigating local carrier concentration and band alignment via SEM/EDX and transient Seebeck microprobe analysis

Cited by 2 publications

References 83 publications

Enhanced thermoelectric properties of In-filled Co₄Sb₁₂ by dispersion of reduced graphene oxide

Enhanced thermoelectric properties of In-filled Co₄Sb₁₂ by dispersion of reduced graphene oxide

Instability Mechanism in Thermoelectric Mg₂(Si,Sn) and the Role of Mg Diffusion at Room Temperature

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Towards energy filtering in Mg2X-based composites: Investigating local carrier concentration and band alignment via SEM/EDX and transient Seebeck microprobe analysis

Cited by 2 publications

References 83 publications

Enhanced thermoelectric properties of In-filled Co4Sb12 by dispersion of reduced graphene oxide

Enhanced thermoelectric properties of In-filled Co4Sb12 by dispersion of reduced graphene oxide

Instability Mechanism in Thermoelectric Mg2(Si,Sn) and the Role of Mg Diffusion at Room Temperature

Contact Info

Product

Resources

About

Enhanced thermoelectric properties of In-filled Co₄Sb₁₂ by dispersion of reduced graphene oxide

Enhanced thermoelectric properties of In-filled Co₄Sb₁₂ by dispersion of reduced graphene oxide

Instability Mechanism in Thermoelectric Mg₂(Si,Sn) and the Role of Mg Diffusion at Room Temperature