Transient Radiation Imaging Based on a ZnO:Ga Single-Crystal Image Converter

Abstract

A ZnO:Ga single crystal with an applicable size of φ40 × 1 mm was prepared using the hydro-thermal method. The crystal exhibits good crystallinity and scintillation properties with a 63.94-arcsec full-width at half-maximum (FWHM) in the X-ray rocking curve (XRC) spectrum, 8% luminous non-uniformity, emission at 389 nm in the X-ray excited luminescence spectrum, fast response and 5.5% BGO luminous intensity. Furthermore, an X-ray pinhole imaging system of nanosecond temporal resolution with a ZnO:Ga single-crystal image converter was established to diagnose the cathode electron emission spatial distribution of an intense current diode. Results for shutter times of 4 μs and 5 ns were obtained, which directly represent the cathode electron spatial distribution throughout the entire pulse duration and during a certain moment of the pulse, respectively. The results demonstrate that the large ZnO:Ga single crystal can diagnose the spatial distribution of cathode electron emission in an intense current diode with high temporal resolution and provide new solutions for high-temporal-resolution diagnosis of a pulse radiation field.

Magnetron Sputtering for ZnO:Ga Scintillation Film Production and Its Application Research Status in Nuclear Detection

“…It is believed that such a scintillator with extremely fast decay time is of great importance in many research areas that require ultrafast scintillators. In addition, Xu [140] and Zhang [141] studied the application of ZnO:Ga scintillation crystals prepared by a hydrothermal method in pulsed radiation detection, as shown in Table 8. Table 8.…”

Effect of Change in Valence State of Ga During Annealing on the Structural, Optical, and Electrical Properties of GZO Crystals

“…From Table 5, the FWHM of the as-grown GZO crystals is found to be 41.9 arcsec, which is lower than the currently reported values of GZO crystals. [22,37] The X-ray rocking curves imply that the as-grown GZO crystals have excellent lattice integrity. For the annealed samples, the GZO crystal orientation gradually deteriorates due to the increase of Ga-O and Zn-O bonds.…”

Growth of Single-Crystalline ZnO Films on 18%-Lattice-Mismatched Sapphire Substrates Using Buffer Layers with Three-Dimensional Islands

“…ZnO has attracted much attention as a remarkable multi-functional material with a wide range of existing and emerging applications, such as varistors, , transparent conducting electrodes, − surface-acoustic-wave (SAW) devices, , gas sensors, , X-ray imaging systems, and thin-film transistors. − Several studies have reported that high-quality single-crystalline ZnO films grow on lattice-matched epitaxial substrates, such as bulk ZnO substrates and ScAlMgO 4 substrates. − However, these substrates are expensive and thus make ZnO films of potentially limited use for large-scale devices. Cost-effective c -plane sapphire is a promising candidate as a substrate for the epitaxial growth of ZnO films because of its cost efficiency if single-crystalline ZnO films grew by overcoming the obstacle of the large lattice mismatch of 18%, which causes a number of crystal defects including 30°-rotated domains and threshold dislocations. , …”

“…ZnO has attracted much attention as a remarkable multifunctional material with a wide range of existing and emerging applications, such as varistors, 1,2 transparent conducting electrodes, 3−9 surface-acoustic-wave (SAW) devices, 10,11 gas sensors, 12,13 X-ray imaging systems, 14 and thin-film transistors. 15−19 Several studies have reported that high-quality single-crystalline ZnO films grow on lattice-matched epitaxial substrates, such as bulk ZnO substrates and ScAlMgO 4 substrates.…”