Transient Resistive Switching for Nonvolatile Memory Based on Water‐Soluble Cs₄PbBr₆ Perovskite Films

Abstract

All‐inorganic halide perovskite Cs4PbBr6 thin films are synthesized at low temperature through a facile chemical deposition method. The deposited films are implemented as a dielectric and dissolvable layer with the Au/Cs4PbBr6/PEDOT:PSS/ITO configuration for transient memory electronic devices. The bipolar resistive switching phenomena, good switching cycling (endurance), and long data retention (104 s) are demonstrated on as‐grown nonvolatile memory device to evaluate its high stability, reliability, and reproducibility. The I–V relationship shows ohmic conduction behavior at the low‐resistance state, whereas space charge limited current mechanism is dominating at the high‐resistance state. The conductive filaments formation and rupture, accompanied by Br− vacancies in Cs4PbBr6 layer, are employed to elucidate switching mechanism. More interestingly, the soluble insulation layer of the devices is quickly dissolved and the color of films transforms from yellow to white as fast as 2 s in deionized water, which exhibits good transient performance. Moreover, the electrical characteristics as well as optical properties vanish absolutely to further demonstrate the abovementioned transition after the memory devices dissolve in deionized water. This work offers a novel way to prepare disposable electronic memory devices by utilizing cheap perovskite‐based materials for transient electronics memory area as well as implantable electronics systems.

Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

“…Furthermore, great efforts have been devoted to exploring new inorganic materials such as perovskite for environmental applications, especially halide perovskite [33,[76][77][78][79][80][81]. Some researches indicate that halide perovskite materials can also be utilized for various applications in terms of environmental protection, for instance, environmental-friendly sensors, disposable consumer devices, and green electronics [77,[80][81][82]. The products we use today are more environmental-friendly and efficient, while the method of obtaining energy is definitely less harmful.…”

“…Perovskite-based thin films were used as a sensing material to develop high-performance gas sensors for the detection of acetone or nitrogen dioxide (NO 2 ) at room temperature. To date, some efforts have been carried out using perovskite materials as a promising candidate for transient and disposable devices [80,81,116,117]. In 2018, Li et al for the first time proposed that the transient resistive-switching electronic device with the perovskite CsPbBr 3 thin-films acting as resistive-switching functional layer [80].…”

“…In 2018, Li et al for the first time proposed that the transient resistive-switching electronic device with the perovskite CsPbBr 3 thin-films acting as resistive-switching functional layer [80]. The investigations on transient characteristics of perovskite-based resistive-switching devices reveal that the CsPbBr 3 thin-films and resistive-switching memory device can be dissolved in deionized water within 60 s. Another work used Cs 4 PbBr 6 thin-films as the switching insulators for fabricating transient perovskite-based resistive-switching memory devices [81]. In that research, dissolution behaviors suggested that Cs 4 PbBr 6 layers can be rapidly dissolved in a way whereby it fully vanished in DI water after 2 s. It is the reason that the higher sensitivity of Cs4PbBr 6 thin-films with smaller thickness toward DI water than the aforementioned CsPbBr 3 thin-films.…”

Robust and Transient Write‐Once‐Read‐Many‐Times Memory Device Based on Hybrid Perovskite Film with Novel Room Temperature Molten Salt Solvent

“…Interestingly, OIHPs exhibit satisfactory transient property for emerging transient devices with rapid dissolution in deionized water. [ 39,40 ] Herein, exploring OIHPs in transient memory device via simple process in ambient atmosphere is rather significant in the development of perovskite memory.…”

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

“…Among them, oxygen annealing is one of most effective approach in reducing the strength of oxygen vacancies, which consequently enhances the switching parameters. Chen et al [16] [20] introduced rapid thermal annealing in atomic layer deposited ZrO 2 thin film, and found improvement in endurance, uniformity and ON/OFF ratio, respectively. Yang et al [21] reported that memory devices after rapid thermal annealing demonstrated remarkable improvement in switching characteristics as compared to as-fabricated devices.…”