Transistor performance in intense magnetic fields

Abstract

The forward current transfer ratio (hFE = (AIcollector /AIbase)) of a germanium junction transistor, operating in the common emitter mode, is reduced by the application of a magnetic field. This reduction is greatest when the magnetic field vector is perpendicular to the direction of minority carrier motion through the base region. The base thickness is also an important variable. Transistors with smaller base (planar diffused) regions a r e less affected by magnetic fields. Key Words ( S u g g e s t e d b y A u t h o r ( s ) ) Distribution StatementUnclassified -unlimited SUMMARYThe forward current transfer ratio (hFE = (AIcollector /hIbase)) of a germanium junction transistor, operating in the common emitter mode, is reduced by the application of a magnetic field. This reduction is greatest when the magnetic field vector is perpendicular to the direction of minority carrier motion through the base region. The base thickness is also an important variable. Transistors with smaller base (planar diffused) regions are less effected by magnetic fields.

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni80Fe20/TI (Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si devices

“…31 (C) Furthermore, under the application of an external magnetic field, the diffusion length of the charge current decreases, resulting in a reduction in the diode current. 32…”

“…31 (C) Furthermore, under the application of an external magnetic field, the diffusion length of the charge current decreases, resulting in a reduction in the diode current. 32 Thus, if we consider all the additional factors, including the base resistance and leakage resistance, that originate under the application of an external magnetic field, the equation representing the current-voltage (I-V) relationship in the presence of a magnetic field can be expressed as: 33…”