1972
DOI: 10.3367/ufnr.0108.197211d.0503
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Transition-metal chalcogenides with layer structures and features of the filling of their brillouin zones

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Cited by 24 publications
(11 citation statements)
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“…Undoped tungsten diselenide is the semiconductor with low charge carrier concentration. The charge carrier concentration of WSe 2 has a value in the range 1 × 10 16 ‐8 × 10 16 cm −3 at room temperature . In order to increase the carrier concentration, we use the substitution in cationic and anionic sublattices.…”
Section: Resultsmentioning
confidence: 99%
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“…Undoped tungsten diselenide is the semiconductor with low charge carrier concentration. The charge carrier concentration of WSe 2 has a value in the range 1 × 10 16 ‐8 × 10 16 cm −3 at room temperature . In order to increase the carrier concentration, we use the substitution in cationic and anionic sublattices.…”
Section: Resultsmentioning
confidence: 99%
“…To register the diffractograms, the following mode was used: 2θ-range 10°-80°, step 0.02°, and accumulation time 2 seconds. The calculation of theoretical diffractograms of WS 2 samples with weight of (~0.3 g) for the analysis were pressed in pellets with 5 mm diameter and 2 mm thickness. The measurements were performed with 100-, 600-, 1000-, and 1500fold magnification.…”
Section: Synthesis and Characterization Of The Compositesmentioning
confidence: 99%
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“…1 Transition metal dichalcogenides find practical use as materials for solid state current sources, lubricants with good antifriction properties, and components of com posite materials of heterophase systems of various distina tion. 2 Metal dichalcogenides are widely used as catalysts in petrochemical industry. 3 It has been found recently that multilayer polyhedral structures resembling carbon "on ions" and nanotubes can be obtained from transition metal dichalcogenides.…”
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confidence: 99%