Transparent, highly flexible, all nanowire network germanium photodetectors

Abstract

We report on the fabrication and characterization of all nanowire (NW) network photodetectors. For this purpose, germanium (Ge) NW networks are used as active semiconducting elements, whereas single walled carbon nanotube (SWNT) and silver (Ag) NW networks are used as the contacts. Following their synthesis, all NW networks are deposited through simple solution based methods. Photoresponse characteristics and transparency of the photodetectors for different Ge NW densities are measured. The fabricated devices show a large response with short relaxation times (<10 ms), are flexible and transparent within the visible spectrum.

Flexible Photodetectors Based on Novel Functional Materials

“…To achieve a photodetector with superior flexibility and outstanding sensing properties, a highly transparent and flexible electrode is essential in addition to the use of a nanostructure sensing material. Metallic NW percolation networks possess high transparency, excellent conductivity, outstanding mechanical flexibility and good chemical stability, which make them extremely promising candidates as electrodes for stretchable electronics and optoelectronics . Yan et al presented the fabrication of stretchable photodetectors consisting of a ZnO NW percolation network channel and Ag NW percolation network electrodes via a fast and effective lithographic filtration method .…”

“…Up to now, 1D inorganic semiconducting nanostructures that have been successfully exploited in realm of flexible photodetection include Si NWs, [46] Ge NWs, [47] carbon NTs (CNTs), [48] Se NBs, [49] ZnO NWs (or NRs), [50][51][52][53][54][55][56][57][58][59][60][61][62] GaN NWs, [63] SnO NWs, [64] CuO NWs, [65] TiO 2 NRs, [66,67] SnO 2 NWs (or NRs, NTs), [68][69][70] MoO 3 nanosheets (NSs), [71] CdS NWs, [72][73][74][75] SnS NRs (or nanoflakes), [76,77] CdSe NBs, [78] ZnSe NBs, [79] ZnTe NWs, [80] GaTe NWs, [81] InP NWs, [82,83] GaP NWs, [82] GaSb NWs, [84] SnS 2 NSs, [85] HfS 2 NBs, [86] PbI 2 NWs (or NPs), [87] ZrS 3 NBs, [88] In 2 S 3 NWs, [89] Sb 2 S 3 nanoneedles or nanowalls, [90,91] Sb 2 Se 3 ...…”

Self-powered ZnS Nanotubes/Ag Nanowires MSM UV Photodetector with High On/Off Ratio and Fast Response Speed

“…Besides, the fully nanostructured PDs concept using the ZnS NTs network as active layer and Ag NWs network as electrodes allows the fabrication of devices through economic and wide scale available methods and display great potential in large area electronics that are flexible and transparent 26–29 . The performance analysis of the as-fabricated device demonstrates a high on/off ratio of 19173 and a fast response speed (τ r  = 0.09 s, τ f  = 0.07 s) without any external bias.…”

Silicon nanowire network metal-semiconductor-metal photodetectors

“…These transparent nanowire electrodes show no shadowing effect on devices and offer flexibility. [46][47][48] Here, we report on the fabrication and characterization of the solution processed Si NW network based MSM photodetectors. Although buckling of Si NWs on elastomeric substrates have been studied 49,50 and Si NW network based devices have been shown for FET applications, 51,52 these structures had not been studied for flexible photodetection.…”