Transparent highly oriented 3C-SiC bulks by halide laser CVD

Cheng, Hanlin; Yang, Meijun; Lai, Youfeng; Hu, Meilong; Li, Qizhong; Tu, Rong; Zhang, Song; Han, Mingxu; Goto, Takashi; Zhang, Lianmeng

doi:10.1016/j.jeurceramsoc.2018.03.015

Cited by 25 publications

(10 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our research group has recently developed an efficient halide laser CVD (HLCVD) process to fabricate dense and pure 3C-SiC bulks with high R dep , including transparent 3C-SiC bulks with low defect density and highly preferred orientations [15][16][17]. The maximum R dep of 3C-SiC prepared by HLCVD reached 3600 µm/h, which is 10 to 10 3 times greater than that of conventional CVD.…”

Section: Introductionmentioning

confidence: 99%

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Lai

Xia

et al. 2020

Materials

Self Cite

View full text Add to dashboard Cite

Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.

show abstract

Section: Introductionmentioning

confidence: 99%

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Lai

Xia

et al. 2020

Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…To synthesize SiC products, the synthesis of the SiC products was completed after sintering for 7 min. A small peak (2θ = 33.6°) ahead of the maximum peak was attributed to stacking faults (marked with ◆) on the 111 plane in β-SiC [27].…”

Section: Resultsmentioning

confidence: 99%

Microwave Sintering Rapid Synthesis of Nano/Micron β-SiC from Waste Lithium Battery Graphite and Photovoltaic Silicon to Achieve Carbon Reduction

et al. 2021

View full text Add to dashboard Cite

The paper describes one promising method and approach for the recycling, reuse, and co-resource treatment of waste photovoltaic silicon and lithium battery anode graphite. Specifically, this work considers the preparation of nano/micron silicon carbide (SiC) from waste resources. Using activated carbon as a microwave susceptor over a very short timeframe, this research paper shows that nano/micron β-SiC can be successfully synthesized using microwave sintering technology. The used sintering temperature is significantly faster and more energy-efficient than traditional processes. The research results show that the β-SiC particle growth morphology greatly affected by the microwave sintering time. In a short microwave sintering time, the morphology of the β-SiC product is in the form of nano/micron clusters. The clusters tended to be regenerated into β-SiC nanorods after appropriately extending the microwave sintering time. In the context of heat conversion and resource saving, the comprehensive CO2 emission reduction is significantly higher than that of the traditional SiC production method.

show abstract

“…9 However, because this process has not proven completely adequate in addressing all the issues discussed herein, the majority of recent CVD 3C-SiC thin film work has centered around the exploration and demonstration of a variety of material and process solutions to further resolve these problems and provide improved control of film structure and morphology. 47 In particular:…”

Section: Cubic 3c-sic: As Discussed Above Extensive Research Has Beenmentioning

confidence: 99%

Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

Kaloyeros,

Arkles

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In Part I of a two-part report, we provide a detailed and systematic review of the latest progress in cutting-edge innovations for the silicon carbide (SiC) material system, focusing on chemical vapor deposition (CVD) thin film technologies. To this end, up-to-date results from both incremental developments in traditional SiC applications as well major advances in novel SiC usages are summarized. Emphasis is placed on new chemical sources for Si and C, particularly in the form of single source SiC precursors as well as emerging molecular and atomic scale deposition techniques, with special attention to their effects on resulting film properties and performance. The review also covers relevant research and development efforts as well as their potential impact on and role in the introduction of new technological applications. Part II will focus on findings for physical vapor deposition (PVD) as well as other deposition techniques.

show abstract

Transparent highly oriented 3C-SiC bulks by halide laser CVD

Cited by 25 publications

References 37 publications

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Microwave Sintering Rapid Synthesis of Nano/Micron β-SiC from Waste Lithium Battery Graphite and Photovoltaic Silicon to Achieve Carbon Reduction

Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

Contact Info

Product

Resources

About