Transport and performance study of double-walled black phosphorus nanotube transistors

Alam, Khairul

doi:10.1088/1361-6641/ac773e

Cited by 4 publications

(4 citation statements)

References 46 publications

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“…where δΩ is the grid volume. Equations 2 and 3 are solved self-consistently using recursive Green's function algorithm [37,38]. In our approach, Σ R is a diagonal matrix.…”

Section: Simulation Approachmentioning

confidence: 99%

Role of Phonon Scattering on the Transport and Performance of an N-Channel Monolayer Black Phosphorus Transistor

Alam

2024

J. Electron. Electric. Eng.

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We investigate the influence of phonon scattering on the transport properties and performance metrics of a monolayer n-channel black phosphorus transistor within a four-band tight binding Hamiltonian, employing a recursive Green's function algorithm and Buttiker probe scattering model. Our analysis reveals that electron-phonon scattering significantly degrades the on-state current, while its effects in the subthreshold region are found to be negligible. Further examination identiﬁes optical phonons as the primary contributors to the degradation of on-state current, with acoustic phonons playing a less prominent role. The ballisticity of the device declines from 42% to 24% when transitioning from solely acoustic phonon scattering to the combined inﬂuence of acoustic and optical phonons. Expanding the placement of Buttiker probes from beneath the gate region to cover the entire path from source to drain results in a further 48% reduction in on-state current. The on-state current exhibits a parabolic relationship with the inverse Kelvin temperature. To quantify the effects of phonon scattering on device performance, we assess the key parameters, transconductance and unity current gain frequency. Phonon scattering is observed to severely impact both the parameters. The on-state transconductance declines from its ballistic value of 24.9 mS/µm to 3.99 mS/µm when both acoustic and optical phonons are concurrently active. Similarly, the unity current gain frequency decreases from 1.18 to 0.2 THz due to phonon scattering. Additionally, our analysis reveals that approximately 7–9% of the total power dissipated within the device is attributed to phonon scattering effects, while the remainder is released through thermalization in the device's contacts. Phonon scattering is shown to induce both lattice cooling and heating, depending on the presence or absence of potential barriers. When a potential barrier exists in the channel, electrons injected from the source experience lattice cooling before the barrier region and lattice heating after crossing the barrier. Including the source and drain contact resistances in our model unveils that achieving a contact resistance value of approximately 100 Ω-µm is crucial for the effective functioning of black phosphorus devices.

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“…where δΩ is the grid volume. Equations 2 and 3 are solved self-consistently using recursive Green's function algorithm [37,38]. In our approach, Σ R is a diagonal matrix.…”

Section: Simulation Approachmentioning

confidence: 99%

Role of Phonon Scattering on the Transport and Performance of an N-Channel Monolayer Black Phosphorus Transistor

Alam

2024

J. Electron. Electric. Eng.

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“…The red rectangle in Figure 1(a) represents the four atoms that make up the BP monolayer's unit cell. Our recursive Green's function algorithm [34,40,41] uses nanoribbon unit cell depicted by the blue vertical lines in Figure 1(a). The layer (or unit cell) Hamiltonian L h and the layer-to-layer (or unit cell-to-unit cell) coupling matrices , 1…”

Section: Device Structure and Simulation Approachmentioning

confidence: 99%

“…in hand. We can now apply the recursive Green's function approach to determine the electron density from the diagonal portions of the source and drain spectral functions [34,40,41],…”

Section: Device Structure and Simulation Approachmentioning

confidence: 99%

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DC and RF Performance of an N-channel Monolayer Black Phosphorus Nanoribbon Transistor

Alam

2023

J. Electron. Electric. Eng.

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Two-dimensional black phosphorus is a relatively new discovery. There are numerous studies on black phosphorus two-dimensional transistors that focus on analog and RF performance. However, the RF performance of black phosphorus nanoribbon transistors is yet to be explored. We use a four-band tight binding Hamiltonian in conjunction with a non-equilibrium Green's function quantum transport simulator to investigate both the DC and RF performance of a monolayer black phosphorus nanoribbon transistor. We found that electron intra-band tunneling is responsible for current flow in the off-state, while in the on-state, the electrons flow over the top of the channel barrier potential. With a VDD of 0.4 volt and a gate length of 5 nm, our black phosphorus nanoribbon transistor has DC performance metrics of 510 µA/µm on-state current, 105 on/off current ratio, and 65 mV/dec inverse subthreshold slope. The device's RF performance characteristics are as follows: cut-off (unity current gain) frequency of 772.84 GHz, maximum oscillation (unity power gain) frequency of 1.15 THz, and open circuit voltage gain of 26.7 dB with transistor operating in the on-state. The RF performance of the device is found to be significantly impacted by the source and drain contact resistances. With source and drain resistances set to zero, the cut-off frequency increases to 995.23 GHz and the unity power gain frequency increases to 4.16 THz. The device shows unconditional stability above 893 GHz and it is conditionally stable below this frequency.

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Manipulating the electronic, magnetic, and optical properties of single-walled armchair phosphorus nanotubes by encapsulating transition metal nanowires

Yang

Xie

Wang

et al. 2023

Materials Today Communications

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Transport and performance study of double-walled black phosphorus nanotube transistors

Cited by 4 publications

References 46 publications

Role of Phonon Scattering on the Transport and Performance of an N-Channel Monolayer Black Phosphorus Transistor

Role of Phonon Scattering on the Transport and Performance of an N-Channel Monolayer Black Phosphorus Transistor

DC and RF Performance of an N-channel Monolayer Black Phosphorus Nanoribbon Transistor

Manipulating the electronic, magnetic, and optical properties of single-walled armchair phosphorus nanotubes by encapsulating transition metal nanowires

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