Transverse Domain Wall Profile for Spin Logic Applications

Goolaup, S.; Maddu, Ramu; Murapaka, Chandrasekhar; Lew, Wen Siang

doi:10.1038/srep09603

Cited by 52 publications

(30 citation statements)

References 38 publications

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“…1,2 Ferromagnetic nanowires showed unique and tunable magnetization properties due to their inherent shape anisotropy. The fabrication of such nanowires in anodic alumina membranes have been widely studied during the last 15 years.…”

Section: Introductionmentioning

confidence: 99%

One dimensional FexCo1-x nanowires; ferromagnetic resonance and magnetization dynamics

et al. 2017

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Soft magnetic nanowires (NWs) are widely used for microwave and mm-wave components. The investigation of magnetization damping behavior of NWs have attracted great interest due to large influence of loss to the device, like integrated microwave device, magnetic sensors, and magnetic random access memory. With increasing operational frequency and degree of integration, the requirements to characterize 1-dimensional NWs become increasingly high. The purpose of this work is to study the magnetization dynamics in FexCo1-x NWs. A series of FexCo1-x (x=0, 0.25, 0.5, 0.75, 1) NWs were grown by controlled electro-deposition. By adjusting FexCo1-x concentration (x=0 to 1), the saturation magnetization, increased more than 20%. Ferromagnetic resonance (FMR) both in field and frequency sweep mode are employed to characterize the NWs in flip-chip geometry. It is observed that FMR field (Hr) increases with increase in applied frequency. At a fixed frequency, Fe NWs resonate at a lower field than the Co substituted NWs. FMR field linewidth (ΔH) as well as frequency width (Δf) are largest for Co NWs and decreased for Fe NWs. Whereas ΔH and Δf decreased further for FexCo1-x nanowires with increasing x.

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Section: Introductionmentioning

confidence: 99%

One dimensional FexCo1-x nanowires; ferromagnetic resonance and magnetization dynamics

et al. 2017

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“…The control of magnetic domain wall (DW) position in nanoscale ferromagnetic structure is crucial for the successful realization of DW based magnetic logic and memory devices [1][2][3][4][5]. Interfacial Dzyaloshinskii-Moriya (IDM) interaction which accounts for asymmetric exchange interaction in magn etic system [6][7][8][9][10][11][12] has received renewed interest due to its role in favoring chiral structure in DWs, skyrmions and spin spi rals [13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Dzyaloshinskii–Moriya interaction induced domain wall depinning anomaly in ferromagnetic nanowire

Teoh¹,

Goolaup²,

Lew³

2016

J. Phys. D: Appl. Phys.

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Magnetic domain wall positional manipulation is usually through the introduction of potential trap. In this work, we show that the presence of interfacial Dzyaloshinkii-Moriya interaction leads to a different static depinning field for Néel domain walls with the same handedness in a notched magnetic nanowire. The difference in static depinning field is due to the Néel domain wall spin orientation. The spin orientation leads to different torques being exerted on the localized magnetic moments. This inherently imposes a spin orientation dependent diodelike behavior for domain walls in a notched nanowire. An equation which relates the difference in static depinning field to the notch geometry is derived. Micromagnetic simulation with varying damping constant reveals the influence of damping constant on the strength of depinning anomaly.

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“…This concept enables mobile data bit within the system. We have previously shown experimentally the logic NOT operation based on DW profile manipulation [Goolaup 2015]. In this paper, we extend the domain wall profile logic to two-bit operations and introduce a device that is programmable at runtime.…”

Section: Introductionmentioning

confidence: 99%

Programmable Logic Operation via Domain Wall Profile Manipulation

2015

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In this paper, we propose a prototype domain wall (DW) programmable magnetic logic device that is able to perform the AND and OR logic functions. The device operates by manipulating the information encoded in the internal spin structure of a transverse domain wall (TDW). The input and output bits in this scheme are the transverse profiles of the domain wall. By exploiting the inherent pinning and depinning mechanisms of the TDW within the device structure, the output DW profile can be deterministically controlled. The logical operation can be programmed at run time by the application of a local Oersted field.

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Transverse Domain Wall Profile for Spin Logic Applications

Cited by 52 publications

References 38 publications

One dimensional FexCo1-x nanowires; ferromagnetic resonance and magnetization dynamics

One dimensional FexCo1-x nanowires; ferromagnetic resonance and magnetization dynamics

Dzyaloshinskii–Moriya interaction induced domain wall depinning anomaly in ferromagnetic nanowire

Programmable Logic Operation via Domain Wall Profile Manipulation

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