Trap model for GaN RF HEMT power switch

Pereira, Aaron; Albahrani, Sayed Ali; Parker, Anthony E.; Heimlich, Michael; Weste, N.; Dunleavy, L.P.; Scott, Stuart A.

doi:10.1109/arftg-2.2013.6737339

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…There are various types of modeling techniques to model a gallium nitride (GaN) high electron mobility transistor (HEMT), but most of them cannot be utilized for circuit design application because they are analytical models, dealing with the physics based behavior of GaN HEMT. The models such as large signal model , semiphysical nonlinear model , empirical model , SPICE , trap model and time domain model are useful models for circuit designing purpose, but the major drawbacks in dealing with these models, is the unavailability of the models for novel device structures, and a large number of variable and fitting parameters are required to model a GaN HEMT behavior. These problems can be resolved by implementing the experimental data to implement the circuit, which will provide an insight view of the device phenomenon.…”

Section: Introductionmentioning

confidence: 99%

Implementation of veriloga GaN HEMT model to design RF switch

Majumdar

Bag

Biswas

2015

Micro & Optical Tech Letters

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GaN HEMT model has been implemented in designing of RF switch through VerilogA. The VerilogA model is formed by experimental data as obtained from DC and RF characteristics of the HEMT. A look‐up‐table based VerilogA model has been prepared to simulate the RF switch in Cadence's spectre. The simulated value of the switch property i.e. isolation and insertion loss is found to be −40 dB to −35 dB and −0.5 dB to −2.5 dB, respectively in the 0.5–2.5 GHz frequency range. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1765–1768, 2015

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Section: Introductionmentioning

confidence: 99%

Implementation of veriloga GaN HEMT model to design RF switch

Majumdar

Bag

Biswas

2015

Micro & Optical Tech Letters

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show abstract

“…1(b). Memory effects associated with traps could also be included in the circuit topology [25], [26]. In the strictly model-based nonlinear-embedding approach pursued in this paper, the memory-effects affecting the device characteristics (I-V and Q-V) are indeed intended to be directly calculated by the device model itself.…”

Section: Introductionmentioning

confidence: 99%