Trends in the ultimate breakdown strength of high dielectric-constant materials

McPherson, J. W.; Kim, Jin‐Young; Shanware, A.; Mogul, H. C.; Rodriguez, J.

doi:10.1109/ted.2003.815141

Cited by 332 publications

(209 citation statements)

References 19 publications

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“…As could be seen, the E B value increased with increasing x. It was known that E B value increased with decreasing dielectric constant [9]. Since the dielectric constant decreased with x in this study, the trend among the E B , x, and the dielectric constant was consistent with previous study.…”

Section: Resultssupporting

confidence: 89%

Preparation of DC-bias-free (Ba, Sr)TiO3-Bi(Mg, Ti)O3-NaNbO3 Ceramics with Reduced Temperature Dependent Dielectric Properties

Maruyama

Ueno

Nakashima

et al. 2015

Trans. Mat. Res. Soc. Japan

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(1-2x)(Ba 0.8 Sr 0.2 )TiO 3 -x(Bi(Mg 0.5 Ti 0.5 )O 3 -NaNbO 3 ) (x = 0 -0.33) ceramics were prepared by solid-state synthesis and the dielectric properties were investigated. At x = 0, the ceramics showed a ferroelectric behavior, and thus the dielectric properties were strongly dependent on electric field and temperature. With increasing x, the ferroelectric behavior became weak, and the electric field and temperature dependence became smaller. For the ceramics with x = 0.25 and 0.33, the dc bias and temperature dependence of the dielectric constant was small, that is, the dielectric constant was 310 -573 under dc bias fields of 0 -180 kV/cm and temperatures of 25 -400 ˚C. Moreover, at x = 0.33, the grain size dependence was also small; the dielectric constant at 25 ˚C and no dc bias was 481 -561 at grains sizes of 1.0 -3.2 µm. These stable dielectric properties indicated that the ceramics could be candidate materials for high temperature, dc-bias-free capacitor applications. [5] are candidate materials for capacitors operating at high electric field and high temperature. This is because polarization electric field loops were less hysteretic and rather linear and thus the dc bias dependence of the dielectric constant was reduced. On the temperature dependence of the dielectric constant, a characteristic broad peak was observed for the solid-solutions, which led a temperature-stable dielectric constant from 200-400˚C, although a strong dielectric dispersion was observed near room temperature. Recently, in the BT-Bi(Zn 1/2 Ti 1/2 )O 3 system, this problem of the dielectric dispersion was circumvented by addition of NaNbO 3 (NN) to lower the temperature that the dielectric properties became strongly frequency dependent [6].In this study, the ceramics of the (Ba 0.8 Sr 0.2 )TiO 3 (BST)-BMT-NN ternary system with the focus of (1-2x)BST-x(BMT-NN) compositions were prepared, and the dielectric properties were investigated. Here, Ba was substituted with Sr to further stabilize the dielectric properties near room temperature by lowering the Curie temperature of BT. Effect of the grain size on the dielectric properties including the dielectric breakdown

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Section: Resultssupporting

confidence: 89%

Preparation of DC-bias-free (Ba, Sr)TiO3-Bi(Mg, Ti)O3-NaNbO3 Ceramics with Reduced Temperature Dependent Dielectric Properties

Maruyama

Ueno

Nakashima

et al. 2015

Trans. Mat. Res. Soc. Japan

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“…Fig. 2 The main crystal structures of SiO 2 discovered by USPEX (Downs & Palmer, 1994) b (Proffen et al, 2005) c (Yamanaka, 2005) (Rignanese et al, 2002) b (McPherson et al, 2003) c (Xu & Ching, 1991) d (Bersch et al, 2008) Pseudo-alloys HfO 2 -SiO 2 show the same characteristic genes of high-k behavior as HfO 2 and SiO 2 . Different coordinations of Hf and Si coexist in these compounds (Fig.…”

Section: Resultsmentioning

confidence: 99%

Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

Zeng

Oganov

Lyakhov

et al. 2014

Acta Crystallogr C Struct Chem

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High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as fitness function in conjunction with first-principles calculations and global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO 2 and HfO 2 , some of which correspond to known phases and some are new. The results allow us to propose characteristics (genes) common to high-fitness structures -these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO 2 -SiO 2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue of discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

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“…has been observed [3]. It has been noted that small volume fractions of nanofillers can significantly improve the composites' dielectric breakdown strength because of their high surface area/internal volume ratio [4].…”

mentioning

confidence: 99%

Microstructure reconstruction and structural equation modeling for computational design of nanodielectrics

Zhang

Zhao

Hassinger

et al. 2015

Integr Mater Manuf Innov

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Nanodielectric materials, consisting of nanoparticle-filled polymers, have the potential to become the dielectrics of the future. Although computational design approaches have been proposed for optimizing microstructure, they need to be tailored to suit the special features of nanodielectrics such as low volume fraction, local aggregation, and irregularly shaped large clusters. Furthermore, key independent structural features need to be identified as design variables. To represent the microstructure in a physically meaningful way, we implement a descriptor-based characterization and reconstruction algorithm and propose a new decomposition and reassembly strategy to improve the reconstruction accuracy for microstructures with low volume fraction and uneven distribution of aggregates. In addition, a touching cell splitting algorithm is employed to handle irregularly shaped clusters. To identify key nanodielectric material design variables, we propose a Structural Equation Modeling approach to identify significant microstructure descriptors with the least dependency. The method addresses descriptor redundancy in the existing approach and provides insight into the underlying latent factors for categorizing microstructure. Four descriptors, i.e., volume fraction, cluster size, nearest neighbor distance, and cluster roundness, are identified as important based on the microstructure correlation functions (CF) derived from images. The sufficiency of these four key descriptors is validated through confirmation of the reconstructed images and simulated material properties of the epoxy-nanosilica system. Among the four key descriptors, volume fraction and cluster size are dominant in determining the dielectric constant and dielectric loss.

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Trends in the ultimate breakdown strength of high dielectric-constant materials

Cited by 332 publications

References 19 publications

Preparation of DC-bias-free (Ba, Sr)TiO<sub>3</sub>-Bi(Mg, Ti)O<sub>3</sub>-NaNbO<sub>3</sub> Ceramics with Reduced Temperature Dependent Dielectric Properties

Preparation of DC-bias-free (Ba, Sr)TiO<sub>3</sub>-Bi(Mg, Ti)O<sub>3</sub>-NaNbO<sub>3</sub> Ceramics with Reduced Temperature Dependent Dielectric Properties

Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

Microstructure reconstruction and structural equation modeling for computational design of nanodielectrics

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