“…Based on the above results, it is observed that the SA-to-RSA switching has been realized by changing the BNT film thickness, which is different from the single NLO absorption type of ferroelectric thin films surveyed in previous reports. 18,[21][22][23] The similar SA-to-RSA switching phenomenon has already been found in noble metal nanoparticles 8-10 and nanocrystalline Si films. [11][12][13] Generally, this switching phenomenon is considered to be the consequence of the competition between the ground-state excitation and the nonlinear absorption, which is critically dependent on the laser photon energy, the intensity of the incident radiation, and the band-gap energy of materials.…”