Tunable Active Microwave Bandpass Filters Using Three-Terminal MESFET Varactors

Lin, Jenshan; Itoh, T.

doi:10.21236/ada253504

1991

DOI: 10.21236/ada253504

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Tunable Active Microwave Bandpass Filters Using Three-Terminal MESFET Varactors

Jenshan Lin¹,

T. Itoh²

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Cited by 3 publications

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A high‐power MMIC VCO utilizing metamorphic HEMT technology

Jun

Kim

Seo

et al. 2007

Micro & Optical Tech Letters

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A high‐power monolithic microwave integrated circuit voltage controlled oscillator (MMIC VCO) that can drive optical devices such as an electro‐absorption and an electro‐optic modulators is presented. A common‐gate metamorphic HEMT (MHEMT) with 0.2 mm of gate width in conjunction with inductive feedback was used to generate negative resistance. The low‐loss coplanar waveguide transmission line on the 650 μm‐thick metamorphic GaAs substrate was utilized to minimize loss. The maximum generated output power of the MHEMT VCO was 40.1 mW at 24.1 GHz when biased at Vds = 3.8 V and Vgs = −0.44 V. Phase noise and frequency tuning range were estimated to be −93.4 dBc/Hz at 1 M Hz offset and 1 GHz, respectively. Experimental results show great promise for the MHEMT MMIC VCO to be used in future high‐power microwave source applications especially for driving optical devices. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2221–2224, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22702

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A high‐power MMIC VCO utilizing metamorphic HEMT technology

Jun

Kim

Seo

et al. 2007

Micro & Optical Tech Letters

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Progress of a tunable active bandpass filter

et al. 1992

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Tunable and reconfigurable bandstop filters enabled by optically controlled switching elements

Shi

Deng

et al. 2022

Electronics Letters

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The authors report a novel approach for designing tunable and reconfigurable bandstop filters by employing bias‐free optically‐controlled photoconductive radio frequency (RF) switching elements. To verify the effectiveness of the approach, a bandstop filter with two stopbands centred at 4.05 and 4.75 GHz was designed using a split‐ring‐coupled microstrip transmission line on RO3010 substrates. To enable reconfigurability, a micromachined Si chip with a thickness of ∼73 μm was embedded in the gap of each resonator. The tuning and reconfiguring of the filter are accomplished by selectively illuminating the Si chips using fibre‐coupled laser diodes with a wavelength of 808 nm. By turning on and off each laser diode, the filter stop bands can be dynamically reconfigured. In addition, the suppression of each stop band can be continuously and independently tuned by changing the light intensity from 0 to 20 W/cm2. With geometric scaling, this approach is promising for realizing a novel class of compact and high‐performance tunable and/or reconfigurable circuits from the microwave to mmW‐THz region.

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Tunable Active Microwave Bandpass Filters Using Three-Terminal MESFET Varactors

Cited by 3 publications

References 7 publications

A high‐power MMIC VCO utilizing metamorphic HEMT technology

A high‐power MMIC VCO utilizing metamorphic HEMT technology

Progress of a tunable active bandpass filter

Tunable and reconfigurable bandstop filters enabled by optically controlled switching elements

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